SCHEMBL72688

SCHEMBL72688

C=C(C)C(=O)OC1C2CC3C(=O)OC1C3O2

nearest known ligand 0.31

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.31
NPC1 O15118 1/20 0.31
POLB P06746 1/20 0.31
MAPT P10636 1/20 0.31
PKM P14618 1/20 0.31
HTT P42858 1/20 0.31
RECQL P46063 1/20 0.31
RAB9A P51151 1/20 0.31
ATM Q13315 1/20 0.31
TDP1 Q9NUW8 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15492912 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL23254337 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL15683097 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL15219196 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL10262923 0.90
SCHEMBL17035924 0.89 MAPK1 (0.36) KDM4EPOLBTDP1
SCHEMBL16775519 0.89
SCHEMBL17247242 0.88 ALDH1A1 (0.33)
SCHEMBL15496094 0.87
SCHEMBL13616603 0.87 TSHR (0.38)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 968 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120004913-A High-purity synthesis method of 5-oxo hexahydro-2, 6-methylfuro [3,2-B ] furan-3-yl methacrylate 成都东凯芯半导体材料有限公司 2025-05-16 CN disclosed
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-20240210830-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-27 US disclosed
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 US disclosed
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 US disclosed
US-20230400766-A1 ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 US disclosed
US-20230400766-A1 ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 US disclosed
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 US disclosed
WO-2023228845-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-11-30 WO disclosed
US-11829069-B2 Photoresist compositions and methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-11-28 US disclosed
US-20060094817-A1 Polymerizable fluorinated compound, making method, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-05-04 US disclosed
EP-1652844-A2 Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2006-05-03 EP disclosed
EP-1652846-A1 Polymerizable fluorinated compound, making method, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-05-03 EP disclosed
EP-1616854-A1 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-01-18 EP disclosed
US-20060009602-A1 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-01-12 US disclosed
US-20050271978-A1 Resist polymer, making method, and chemically amplified positive resist composition SHIN-ETSU CHEMICAL CO., LTD. 2005-12-08 US disclosed
US-20050227174-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-10-13 US disclosed
US-20050208424-A1 (Meth)acrylate polymer comprising (co)monomers having adamantane group such as 2-ethyl-2-adamantyl-methacrylate, 10.0 g of hydroxyadamantyl methacrylate, 15.2 g of 4,8-dioxatricyclo[4.2.1.03,7]nonan-5-on-2-yl methacrylate; sensitive to high energy radiation; resolution; micropatterning SHIN-ETSU CHEMICAL CO., LTD. 2005-09-22 US disclosed
US-6673518-B2 PHENOL-FORMALDEHYDE RESIN AND ACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-01-06 US disclosed
US-20030054289-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-03-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20060009602-A1 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process HRH3, SUV39H2, SUV39H1 KDM4E 298/4885NPC1 3775/4885POLB 1422/4885
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND RER1, RFT1, RAD51 KDM4E 1445/4885NPC1 3033/4885POLB 1280/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.