⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL715681 | 1.00 | — | — | |
| SCHEMBL10391969 | 1.00 | — | — | |
| SCHEMBL890500 | 1.00 | — | — | |
| SCHEMBL7104338 | 0.87 | — | — | |
| SCHEMBL18427899 | 0.87 | — | — | |
| SCHEMBL3444819 | 0.87 | — | — | |
| SCHEMBL996453 | 0.87 | — | — | |
| SCHEMBL9989320 | 0.87 | — | — | |
| SCHEMBL8201124 | 0.82 | — | — | |
| SCHEMBL16303 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 131 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-1842503-B | Glazing provided with stacked thin layers which reflect infrared rays and/or solar radiation | SAINT GOBAIN | 2010-06-16 | — | — | CN | claimed |
| US-7544986-B2 | System including integrated circuit structures formed in a silicone ladder polymer layer | MICRON TECHNOLOGY, INC. (US) | 2009-06-09 | — | — | US | claimed |
| US-7402514-B2 | Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layer | TEXAS INSTRUMENTS INCORPORATED (US) | 2008-07-22 | — | — | US | claimed |
| US-20070138643-A1 | Semiconductor device having metal interconnection structure and method for forming the same | DONGBU ELECTRONICS CO., LTD. | 2007-06-21 | — | — | US | claimed |
| CN-1842503-A | Glazing provided with stacked thin layers which reflect infrared rays and/or solar radiation | SAINT GOBAIN (FR) | 2006-10-04 | — | — | CN | claimed |
| US-20030207564-A1 | Copper dual damascene interconnect technology | AHN KIE Y (US) | 2003-11-06 | — | — | US | claimed |
| US-20020089063-A1 | Copper dual damascene interconnect technology | MICRON TECHNOLOGY, INC. | 2002-07-11 | — | — | US | claimed |
| US-20020090806-A1 | Copper dual damascene interconnect technology | AHN KIE Y (US) | 2002-07-11 | — | — | US | claimed |
| US-20020014646-A1 | Integrated circuit capacitor | TSU ROBERT (US) | 2002-02-07 | — | — | US | claimed |
| EP-0936667-A1 | Lattice matched barrier for dual doped polysilicon gates | LUCENT TECHNOLOGIES INC. (US) | 1999-08-18 | — | — | EP | claimed |
| EP-0856879-A1 | Method for fabricating a semiconductor memory capacitor | TEXAS INSTRUMENTS INCORPORATED (US) | 1998-08-05 | — | — | EP | claimed |
| US-5066615-A | Integrated Circuits | AT&T BELL LABORATORIES (US) | 1991-11-19 | — | — | US | claimed |
| JP-10079481-A | — | — | None | — | — | JP | disclosed |
| JP-10209081-A | — | — | None | — | — | JP | disclosed |
| US-20240222447-A1 | GATE CUT, AND SOURCE AND DRAIN CONTACTS | INTEL CORPORATION (US) | 2024-07-04 | — | — | US | disclosed |
| EP-4394857-A1 | GATE CUT, AND SOURCE AND DRAIN CONTACTS | INTEL Corporation (US) | 2024-07-03 | — | — | EP | disclosed |
| US-5659057-A | Five- and six-coordinate precursors for titanium nitride deposition | MICRON TECHNOLOGY, INC. (US) | 1997-08-19 | — | — | US | disclosed |
| US-5543644-A | High density electrical ceramic oxide capacitor | NATIONAL SEMICONDUCTOR CORPORATION (US) | 1996-08-06 | — | — | US | disclosed |
| US-5401680-A | Method for forming a ceramic oxide capacitor having barrier layers | NATIONAL SEMICONDUCTOR CORPORATION (US) | 1995-03-28 | — | — | US | disclosed |
| US-5066615-A | Integrated Circuits | AT&T BELL LABORATORIES (US) | 1991-11-19 | — | — | US | disclosed |