SCHEMBL890500

SCHEMBL890500

[N-3].[N-3].[N-3].[N-3].[Si].[Ti+4].[Ti+4].[Ti+4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL715681 1.00
SCHEMBL10391969 1.00
SCHEMBL73746 1.00
SCHEMBL7104338 0.87
SCHEMBL18427899 0.87
SCHEMBL3444819 0.87
SCHEMBL996453 0.87
SCHEMBL9989320 0.87
SCHEMBL8201124 0.82
SCHEMBL16303 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 169 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12027419-B2 Semiconductor device including liner structure TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) 2024-07-02 US claimed
CN-118201478-A Semiconductor device and method for manufacturing the same 芯联集成电路制造股份有限公司 2024-06-14 CN claimed
CN-118098984-A Semiconductor lead frame for automobile circuit board and preparation process thereof 江苏恒盈电子科技有限公司 2024-05-28 CN claimed
CN-117820011-A Multi-material photo-curing 3D printing integrated preparation method of titanium nitride silicon carbide heat absorption and storage heterogeneous ceramic framework 华中科技大学 2024-04-05 CN claimed
CN-117255564-A Spontaneous polarization memory cell and manufacturing method thereof 温州核芯智存科技有限公司 2023-12-19 CN claimed
CN-116569342-A Semiconductor chip, preparation method thereof and electronic equipment 华为技术有限公司 2023-08-08 CN claimed
CN-116421062-A Non-stick pan and manufacturing method thereof 苏州家益厨具科技有限公司 2023-07-14 CN claimed
WO-2023102679-A1 SEMICONDUCTOR CHIP AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE 华为技术有限公司 2023-06-15 WO claimed
CN-115332175-A Semiconductor device and method for forming the same 台湾积体电路制造股份有限公司 2022-11-11 CN claimed
CN-110838488-B Semiconductor device and method for forming the same 台湾积体电路制造股份有限公司 2022-04-26 CN claimed
CN-101807526-A Method for adjusting Schottky barrier height of metal silicide source/drain INST OF MICROELECTRONICS CAS 2010-08-18 CN claimed
US-20080290337-A1 Ultrathin Dielectrics and the Application Thereof in Organic Field Effect Transistors QIMONDA AG (DE) 2008-11-27 US claimed
US-7211520-B2 Method for fabricating a field effect transistor INFINEON TECHNOLOGIES AG (DE) 2007-05-01 US claimed
US-20050189536-A1 Self-assembly organic dielectric layers based on phosphonic acid derivatives QIMONDA AG (DE) 2005-09-01 US claimed
US-20050191801-A1 Method for fabricating a field effect transistor POLARIS INNOVATIONS LIMITED (IE) 2005-09-01 US claimed
US-6800494-B1 Method and apparatus for controlling copper barrier/seed deposition processes ADVANCED MICRO DEVICES, INC. 2004-10-05 US claimed
US-20040157392-A1 CAPACITOR IN AN INTERCONNECT SYSTEM AND METHOD OF MANUFACTURING THEREOF MARLIN SEMICONDUCTOR LIMITED (IE) 2004-08-12 US claimed
US-6629879-B1 Chemical mechanical polishing to remove layer of barrier metal from above insulating layer on wafer, irradiating at least one area of wafer with x-rays, analyzing x-rays leaving irradiated area to determine presence of barrier layer metal ADVANCED MICRO DEVICES, INC. 2003-10-07 US claimed
US-20030183509-A1 METHOD FOR FORMING A SPUTTERED LAYER AND APPARATUS THEREFOR FREESCALE SEMICONDUCTOR, INC. 2003-10-02 US claimed
US-6620301-B1 Method for forming a sputtered layer and apparatus therefor MOTOROLA, INC. 2003-09-16 US claimed