Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | USP2 | O75604 | 1/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.40 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.40 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.40 |
| ▸ | MAPT | P10636 | 1/20 | 0.37 |
| ▸ | CHRM2 | P08172 | 2/20 | 0.36 |
| ▸ | CHRM4 | P08173 | 2/20 | 0.36 |
| ▸ | CHRM1 | P11229 | 2/20 | 0.36 |
| ▸ | CHRM3 | P20309 | 2/20 | 0.36 |
| ▸ | NAAA | Q02083 | 2/20 | 0.33 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15128297 | 0.89 | CHRM2 (0.37) | USP2ALDH1A1ALOX15TDP1MAPT | |
| SCHEMBL15064539 | 0.85 | NAAA (0.41) | USP2ALDH1A1ALOX15TDP1MAPT | |
| SCHEMBL23000774 | 0.84 | MAPT (0.35) | USP2ALDH1A1ALOX15TDP1MAPT | |
| SCHEMBL12296578 | 0.82 | USP2 (0.34) | USP2ALDH1A1ALOX15TDP1MAPT | |
| SCHEMBL7224503 | 0.82 | — | — | |
| SCHEMBL9364518 | 0.81 | MGAM (0.48) | USP2ALDH1A1ALOX15TDP1MAPT | |
| SCHEMBL31564984 | 0.81 | ALDH1A1 (0.33) | USP2ALDH1A1ALOX15TDP1MAPT | |
| SCHEMBL3675433 | 0.78 | — | — | |
| SCHEMBL14618687 | 0.78 | — | — | |
| SCHEMBL11981183 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 843 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6730451-B2 | FLUOROACRYLATE POLYMERS; TRANSPARENCY; PREVENTING NEGATIVE WORKING; LOW ABSORPTION OF FLUORINE EXCIMER LASER LIGHT; HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-05-04 | — | — | US | claimed |
| US-6623909-B2 | Polysiloxane | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-09-23 | — | — | US | claimed |
| US-6596463-B2 | Photosensitivity, resolution, chemical resistance | SHIN-ETSU CHEMICAL, CO., LTD. (JP) | 2003-07-22 | — | — | US | claimed |
| US-6461790-B1 | NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASER AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-08 | — | — | US | claimed |
| US-6461789-B1 | NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASERS, AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-08 | — | — | US | claimed |
| US-6436606-B1 | POLYMERS AND PHOTORESISTS COATING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-20 | — | — | US | claimed |
| US-20240241442-A1 | Positive Resist Material And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-18 | — | — | US | disclosed |
| US-20240210830-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-27 | — | — | US | disclosed |
| US-12013639-B2 | Positive resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-18 | — | — | US | disclosed |
| US-20240184200-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-06 | — | — | US | disclosed |
| CN-118112887-A | Resist composition and pattern forming method | 信越化学工业株式会社 | 2024-05-31 | — | — | CN | disclosed |
| US-20240168379-A1 | Positive Resist Material And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-23 | — | — | US | disclosed |
| US-20240168378-A1 | Positive Resist Material And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-23 | — | — | US | disclosed |
| EP-1096318-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240168378-A1 | Positive Resist Material And Patterning Process | HNRNPU, DSTN, NSUN2 | USP2 107/4885ALDH1A1 3565/4885ALOX15 3503/4885 |
| US-20240184200-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | ADAR, HNRNPU, POLQ | USP2 4472/4885ALDH1A1 4624/4885ALOX15 862/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.