SCHEMBL740608

SCHEMBL740608

O=[Sb]([O-])([O-])F.O=[Sb]([O-])([O-])F.O=[Sb]([O-])([O-])F.O=[Sb]([O-])([O-])F.O=[Sb]([O-])([O-])F.O=[Sb]([O-])([O-])F.c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8418924 1.00
SCHEMBL927141 1.00
SCHEMBL9171104 1.00
SCHEMBL445270 0.90 FBP1 (0.31)
SCHEMBL7118265 0.90 FBP1 (0.31)
SCHEMBL16534629 0.88 TSHR (0.37)
Fluoride Ion SCHEMBL7263681 0.87 FBP1 (0.30)
Fluoride Ion SCHEMBL7263684 0.87 FBP1 (0.30)
SCHEMBL18840028 0.86 HPGD (0.39)
Hexane SCHEMBL8532869 0.86 CES2 (0.40)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 92 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7338742-B2 Photoresist polymer and photoresist composition containing the same HYNIX SEMICONDUCTOR INC. (KR) 2008-03-04 US claimed
US-7083893-B2 Photoresist polymer and photoresist composition containing the same HYNIX SEMICONDUCTOR INC. (KR) 2006-08-01 US claimed
US-7022458-B2 Photoresist polymer and photoresist composition containing the same HYNIX SEMICONDUCTOR INC. (KR) 2006-04-04 US claimed
US-20050089800-A1 Photoresist polymer and photoresist composition containing the same HYNIX SEMICONDUCTOR INC. (KR) 2005-04-28 US claimed
US-20050026070-A1 Photoresist polymer and photoresist composition containing the same HYNIX SEMICONDUCTOR INC. (KR) 2005-02-03 US claimed
US-20040265735-A1 Photoresist polymer and photoresist composition containing the same HYNIX SEMICONDUCTOR INC. (KR) 2004-12-30 US claimed
EP-0802954-A1 METHOD OF PRINTING, PRINTING INK AND A METHOD OF MANUFACTURING THE SAME, AND THE USE THEREOF Druckfarbenfabrik Gebr. Schmidt GmbH (DE) 1997-10-29 EP claimed
WO-1996021702-A1 METHOD OF PRINTING, PRINTING INK AND A METHOD OF MANUFACTURING THE SAME, AND THE USE THEREOF DRUCKFARBENFABRIK GEBR. SCHMIDT GMBH (DE) 1996-07-18 WO claimed
EP-0422570-B1 Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions IBM (US) 1995-12-27 EP claimed
US-5059512-A ULTRAVIOLET LIGHT SENSITIVE PHOTOINITIATOR COMPOSITIONS, USE THEREOF AND RADIATION SENSITIVE COMPOSITIONS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1991-10-22 US claimed
EP-0229917-B1 A PROCESS FOR GENERATING A POSITIVE TONE PHOTORESIST International Business Machines Corporation (US) 1990-07-04 EP claimed
EP-0225454-B1 POSITIVE RESIST SYSTEM HAVING HIGH RESISTANCE TO OXYGEN REACTIVE ION ETCHING International Business Machines Corporation (US) 1989-05-10 EP claimed
EP-2765148-B1 Coatings based on epoxy and a method for their preparation and their uses EL KUDSI KARIM (DE) 2020-04-01 EP disclosed
EP-2765148-A1 Coatings based on epoxy and a method for their preparation and their uses El Kudsi, Karim (DE) 2014-08-13 EP disclosed
US-8703238-B2 Curable inkjet ink set and methods for inkjet printing AGFA GRAPHICS NV (BE) 2014-04-22 US disclosed
US-8507181-B2 Method for developing and sealing of lithographic printing plates KODAK (NEAR EAST) INC. 2013-08-13 US disclosed
EP-0264908-A2 High sensitivity resists having autodecomposition temperatures greater than about 160 C International Business Machines Corporation (US) 1988-04-27 EP disclosed
EP-0132710-B1 LIGHT-SENSITIVE RECORDING MATERIAL FOR THE PRODUCTION OF RELIEF OR RESIST PATTERNS BASF Aktiengesellschaft (DE) 1987-01-21 EP disclosed
EP-0132710-A1 Light-sensitive recording material for the production of relief or resist patterns BASF Aktiengesellschaft (DE) 1985-02-13 EP disclosed
US-4101513-A ONIUM CATALYSTS OF GROUP 5A, 6A OR 7A ATOMS MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1978-07-18 US disclosed