SCHEMBL74568

SCHEMBL74568

C=C(C)C(=O)OC(C)(C)C1CCCO1

nearest known ligand 0.38

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.38
KDM4E B2RXH2 1/20 0.31
LMNA P02545 1/20 0.31
HPGD P15428 1/20 0.31
TSHR P16473 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL75376 0.81 ALDH1A1 (0.34) ALDH1A1
SCHEMBL76444 0.81 ALDH1A1 (0.37) ALDH1A1
SCHEMBL12835649 0.81 LMNA (0.34) ALDH1A1LMNA
SCHEMBL16942535 0.80 ALDH1A1 (0.33) ALDH1A1
SCHEMBL74977 0.80 ALDH1A1 (0.33) ALDH1A1
SCHEMBL25475953 0.78 ALDH1A1 (0.36) ALDH1A1
SCHEMBL76446 0.77 TSHR (0.31) TSHR
SCHEMBL12673020 0.77 USP2 (0.38) ALDH1A1HPGD
SCHEMBL10936325 0.77 ALDH1A1 (0.41) ALDH1A1
SCHEMBL12390100 0.76 ABCB1 (0.44) ALDH1A1LMNAHPGDTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 384 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230174471-A1 ACETAL-BASED COMPOUND, ACETAL-BASED PREPOLYMER, ACETAL-BASED POLYMER, AND PHOTORESIST COMPOSITION COMPRISING THE SAME INHA INDUSTRY PARTNERSHIP INSTITUTE (KR) 2023-06-08 US disclosed
US-10457761-B2 Polymer, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-29 US disclosed
US-10005868-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10005868-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9910358-B2 Patterning process and chemically amplified negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-06 US disclosed
US-9910358-B2 Patterning process and chemically amplified negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-06 US disclosed
US-20180024435-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-25 US disclosed
US-7368218-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-06 US disclosed
US-7368218-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-06 US disclosed
US-20080020289-A1 Novel polymer, positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed
US-20080020289-A1 Novel polymer, positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed
US-20070207408-A1 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-09-06 US disclosed
US-20070207408-A1 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-09-06 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-20070072115-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-29 US disclosed
US-20070072115-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-29 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230174471-A1 ACETAL-BASED COMPOUND, ACETAL-BASED PREPOLYMER, ACETAL-BASED POLYMER, AND PHOTORESIST COMPOSITION COMPRISING THE SAME PARP10, ADCY10, APRT ALDH1A1 83/4885KDM4E 2385/4885LMNA 777/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.