SCHEMBL74937

SCHEMBL74937

C=C(C)C(=O)Oc1cccc2c1CCC2=O

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.43
GAA P10253 1/20 0.43
ABCB1 P08183 2/20 0.42
KMT2A Q03164 2/20 0.41
ATM Q13315 1/20 0.41
ELANE P08246 1/20 0.41
MRGPRX4 Q96LA9 1/20 0.40
KDM4E B2RXH2 2/20 0.40
HPGD P15428 1/20 0.40
LMNA P02545 1/20 0.39
POLB P06746 1/20 0.39
MAPT P10636 1/20 0.39
ADRB2 P07550 1/20 0.38
ADRB1 P08588 1/20 0.38
HTR1A P08908 1/20 0.38
ADRB3 P13945 1/20 0.38
TSHR P16473 1/20 0.38
SLC6A4 P31645 1/20 0.38
SIGMAR1 Q99720 1/20 0.38
BRAF P15056 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL941425 0.86 ALDH1A1 (0.46) ALDH1A1GAAABCB1KMT2AMRGPRX4
SCHEMBL12253327 0.81 ABCB1 (0.44) ALDH1A1GAAABCB1KMT2AMRGPRX4
SCHEMBL19645156 0.80 MRGPRX4 (0.35) ALDH1A1GAAABCB1MRGPRX4ADRB2
SCHEMBL6634297 0.80 ABCB1 (0.45) ALDH1A1GAAABCB1KMT2AMRGPRX4
SCHEMBL12216198 0.79 TYMS (0.46) ALDH1A1GAAABCB1KMT2AMRGPRX4
SCHEMBL19139258 0.79 ELANE (0.47) ALDH1A1GAAABCB1ELANEMRGPRX4
SCHEMBL14001892 0.78 KMT2A (0.38) ALDH1A1KMT2AATMELANEKDM4E
SCHEMBL7383485 0.77 ALDH1A1 (0.44) ALDH1A1GAAABCB1KMT2AMRGPRX4
SCHEMBL11805157 0.77 MRGPRX4 (0.52) ALDH1A1GAAABCB1KMT2AMRGPRX4
SCHEMBL12930759 0.77 TOP1 (0.56) ALDH1A1GAAABCB1KMT2AMRGPRX4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 460 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10509314-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-12-17 US disclosed
US-10457761-B2 Polymer, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-29 US disclosed
US-10222696-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-03-05 US disclosed
US-10191373-B2 Method for producing polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-01-29 US disclosed
US-10012903-B2 Resist composition and pattern forming process SHIN-ESTU CHEMICAL CO., LTD. (JP) 2018-07-03 US disclosed
US-10012903-B2 Resist composition and pattern forming process SHIN-ESTU CHEMICAL CO., LTD. (JP) 2018-07-03 US disclosed
US-10005868-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10005868-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-7491483-B2 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-17 US disclosed
US-7491483-B2 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-17 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed
US-20070207408-A1 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-09-06 US disclosed
US-20070207408-A1 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-09-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10509314-B2 Resist composition and patterning process SRMS, SLC11A2, PCNA ALDH1A1 4490/4885GAA 4880/4885ABCB1 4391/4885
US-10222696-B2 Resist composition and patterning process SLC11A2, GRN, PGF ALDH1A1 4832/4885GAA 2798/4885ABCB1 1930/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.