SCHEMBL7568440

SCHEMBL7568440

CCCCCCCCCCCCCCCCO[Si](C)(OCCCCCCCCCCCCCCCC)OCCCCCCCCCCCCCCCC

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRB P10828 2/20 0.44
TSHR P16473 1/20 0.44
MEN1 O00255 1/20 0.41
HTT P42858 1/20 0.41
KMT2A Q03164 1/20 0.41
MAPT P10636 1/20 0.41
ALDH1A1 P00352 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
CA1 P00915 8/20 0.39
CA2 P00918 8/20 0.39
CA9 Q16790 7/20 0.39
LPAR3 Q9UBY5 6/20 0.39
LPAR2 Q9HBW0 5/20 0.39
CA12 O43570 3/20 0.39
CA7 P43166 3/20 0.39
CA14 Q9ULX7 3/20 0.39
LPAR1 Q92633 2/20 0.39
CA3 P07451 2/20 0.39
CA4 P22748 2/20 0.39
CA6 P23280 2/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7786537 1.00 THRB (0.44) THRBTSHRMEN1HTTKMT2A
SCHEMBL662567 1.00 THRB (0.44) THRBTSHRMEN1HTTKMT2A
SCHEMBL662288 1.00 THRB (0.44) THRBTSHRMEN1HTTKMT2A
SCHEMBL661550 1.00 THRB (0.44) THRBTSHRMEN1HTTKMT2A
SCHEMBL661840 1.00 THRB (0.44) THRBTSHRMEN1HTTKMT2A
SCHEMBL661810 0.97 THRB (0.39) THRBTSHRMEN1HTTKMT2A
SCHEMBL6292792 0.90 CA1 (0.33) THRBTSHRMEN1HTTKMT2A
SCHEMBL93421 0.88 ADRB2 (0.43) THRBTSHRALDH1A1CA1CA2
SCHEMBL25277699 0.87 DNM1 (0.39) THRBTSHRMEN1HTTKMT2A
SCHEMBL31506910 0.87 DNM1 (0.39) THRBTSHRMEN1HTTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8946095-B2 Method of forming interlayer dielectric film above metal gate of semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2015-02-03 US claimed
EP-0830579-B1 FORMULATIONS AND METHOD OF USE OF PRESSURE SENSITIVE PAINT MC DONNELL DOUGLAS CORP (US) 2002-09-11 EP claimed
US-8946095-B2 Method of forming interlayer dielectric film above metal gate of semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2015-02-03 US disclosed
US-20140120706-A1 METHOD OF FORMING INTERLAYER DIELECTRIC FILM ABOVE METAL GATE OF SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2014-05-01 US disclosed