SCHEMBL760198

SCHEMBL760198

CCOC(OCC)[SiH2]C1CO1

nearest known ligand 0.32

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.32
LMNA P02545 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23573076 0.77
SCHEMBL28155611 0.68 THRB (0.32) THRBLMNA
SCHEMBL3889901 0.67 SHBG (0.33) THRB
SCHEMBL16610553 0.65 SMN1; SMN2 (0.43)
SCHEMBL17049376 0.64
SCHEMBL2147510 0.64 THRB (0.36) THRBLMNA
SCHEMBL29084062 0.63
SCHEMBL27611489 0.63
SCHEMBL2931933 0.63 THRB (0.47) THRBLMNA
SCHEMBL17247857 0.62

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240170282-A1 METHOD AND SYSTEM FOR TUNING PHOTORESIST ADHESION LAYER PROPERTIES ASM IP HOLDING B.V. (NL) 2024-05-23 US claimed
CN-117995660-A Method and system for adjusting properties of photoresist adhesion layer ASM IP私人控股有限公司 2024-05-07 CN claimed
WO-2007047822-A2 NANOPOROUS LOW-K FILMS WITH INFILTRATED POROSITY ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2007-04-26 WO claimed
CN-115768919-B Vapor deposition precursor compounds and methods of use 恩特格里斯公司 2025-04-18 CN disclosed
US-12209105-B2 Vapor deposition precursor compounds and process of use ENTEGRIS, INC. (US) 2025-01-28 US disclosed
EP-3425657-B1 METHOD FOR PRODUCING AN INTERFACE FOR TEMPORARILY JOINING A MICROELECTRONIC SUPPORT AND A CONTROL HANDLE, AND TEMPORARY ASSEMBLY INTERFACE COMMISSARIAT ENERGIE ATOMIQUE (FR) 2024-11-06 EP disclosed
US-20240170282-A1 METHOD AND SYSTEM FOR TUNING PHOTORESIST ADHESION LAYER PROPERTIES ASM IP HOLDING B.V. (NL) 2024-05-23 US disclosed
CN-117995660-A Method and system for adjusting properties of photoresist adhesion layer ASM IP私人控股有限公司 2024-05-07 CN disclosed
EP-4165226-A1 VAPOR DEPOSITION PRECURSOR COMPOUNDS AND PROCESS OF USE Entegris, Inc. (US) 2023-04-19 EP disclosed
US-20230041086-A1 VAPOR DEPOSITION PRECURSOR COMPOUNDS AND PROCESS OF USE MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT 2023-02-09 US disclosed
US-11466038-B2 Vapor deposition precursor compounds and process of use ENTEGRIS, INC. (US) 2022-10-11 US disclosed
US-20150251127-A1 GAS CHROMATOGRAPHY COLUMN COMPRISING A POROUS STATIONARY PHASE IN KEEPING THEREWITH Commissariat à I'énergie atomique et aux énergie alternatives (FR) 2015-09-10 US disclosed
EP-2914958-A1 GAS CHROMATOGRAPHY COLUMN COMPRISING A POROUS STATIONARY PHASE IN KEEPING THEREWITH Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR) 2015-09-09 EP disclosed
WO-2015097282-A1 GRAVIMETRIC GAS SENSOR HAVING A LOWERED DETECTION LIMIT Commissariat à l'énergie atomique et aux énergies alternatives (FR) 2015-07-02 WO disclosed
WO-2014068004-A1 GAS CHROMATOGRAPHY COLUMN COMPRISING A POROUS STATIONARY PHASE IN KEEPING THEREWITH Commissariat à l'énergie atomique et aux énergies alternatives (FR) 2014-05-08 WO disclosed
US-8524332-B2 Process for preparing thin layers of nanoporous dielectric materials COMMISSARIAT A L'ENERGIE ATOMIQUE (FR) 2013-09-03 US disclosed
EP-2019152-B1 Method of preparing thin layers of nanoporous dielectric materials COMMISSARIAT ENERGIE ATOMIQUE (FR) 2012-03-21 EP disclosed
US-20090155535-A1 Process for preparing thin layers of nanoporous dielectric materials COMMISSARIAT A I'ENERGIE ATOMIQUE (FR) 2009-06-18 US disclosed
EP-2019152-A1 Method of preparing thin layers of nanoporous dielectric materials COMMISSARIAT A L'ENERGIE ATOMIQUE (FR) 2009-01-28 EP disclosed
WO-2007047822-A2 NANOPOROUS LOW-K FILMS WITH INFILTRATED POROSITY ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2007-04-26 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230041086-A1 VAPOR DEPOSITION PRECURSOR COMPOUNDS AND PROCESS OF USE PNN, VEGFA, VCL THRB 4282/4885LMNA 671/4885
US-12209105-B2 Vapor deposition precursor compounds and process of use PNN, VEGFA, VCL THRB 4282/4885LMNA 671/4885
US-11466038-B2 Vapor deposition precursor compounds and process of use PNN, VEGFA, VCL THRB 4282/4885LMNA 671/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.