SCHEMBL766770

SCHEMBL766770

Oc1ccc(C=CC2=Cc3cccc4cccc2c34)cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 5/20 0.42
MEN1 O00255 4/20 0.42
MAPT P10636 4/20 0.42
APP P05067 4/20 0.42
KDM4E B2RXH2 3/20 0.42
ALDH1A1 P00352 3/20 0.42
LMNA P02545 3/20 0.42
SMN1; SMN2 Q16637 3/20 0.42
CA12 O43570 2/20 0.42
CA1 P00915 2/20 0.42
CA2 P00918 2/20 0.42
CA3 P07451 2/20 0.42
CA4 P22748 2/20 0.42
CA6 P23280 2/20 0.42
CA5A P35218 2/20 0.42
CA7 P43166 2/20 0.42
CA9 Q16790 2/20 0.42
CA13 Q8N1Q1 2/20 0.42
CA14 Q9ULX7 2/20 0.42
CA5B Q9Y2D0 2/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9075196 0.85 MAPK1 (0.42) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL31236759 0.85 MAPK1 (0.42) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL9296363 0.72 MAPK1 (0.42) KMT2AMEN1MAPTALDH1A1TP53
SCHEMBL548612 0.72 MAPK1 (0.53) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL17183628 0.72 MEN1 (0.42) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL5376120 0.71 MAPK1 (0.47) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL130420 0.68 KMT2A (0.59) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL25239917 0.67 BACE1 (0.57) KMT2AMEN1MAPTALDH1A1CYP3A4
SCHEMBL31352211 0.67 BACE1 (0.57) KMT2AMEN1MAPTALDH1A1CYP3A4
SCHEMBL5684522 0.66 MAOB (0.42) KMT2AMEN1ALDH1A1LMNAMAOB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9482949-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-01 US disclosed
US-9291900-B2 Composition for forming resist underlayer film, containing silicon that bears diketone-structure-containing organic group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-03-22 US disclosed
US-9250522-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-9217921-B2 Resist underlayer film forming composition containing silicon having sulfide bond NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-12-22 US disclosed
US-9196484-B2 Silicon-containing composition for formation of resist underlayer film, which contains organic group containing protected aliphatic alcohol NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-11-24 US disclosed
US-20150253665-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-10 US disclosed
US-20150212416-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-30 US disclosed
US-9023588-B2 Resist underlayer film forming composition containing silicon having nitrogen-containing ring NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-05-05 US disclosed
US-8877425-B2 Silicon-containing resist underlayer film forming composition having fluorine-based additive NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-11-04 US disclosed
US-8864894-B2 Resist underlayer film forming composition containing silicone having onium group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-10-21 US disclosed
US-20130224957-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING FLUORINE-BASED ADDITIVE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-08-29 US disclosed
US-20130183830-A1 SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-07-18 US disclosed
EP-2538276-A1 COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM CONTAINING SILICON HAVING NITROGEN-CONTAINING RING Nissan Chemical Industries, Ltd. (JP) 2012-12-26 EP disclosed
US-20120315765-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-12-13 US disclosed
EP-2479615-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM Nissan Chemical Industries, Ltd. (JP) 2012-07-25 EP disclosed
US-20120178261-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-07-12 US disclosed
US-20120070994-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-03-22 US disclosed
EP-2336256-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM WITH ONIUM GROUP Nissan Chemical Industries, Ltd. (JP) 2011-06-22 EP disclosed
US-20110143149-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-06-16 US disclosed
EP-2249204-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING CYCLIC AMINO GROUP Nissan Chemical Industries, Ltd. (JP) 2010-11-10 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120315765-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING SRSF1, SRSF7, SRRM2 KMT2A 697/4885MEN1 1956/4885MAPT 4750/4885
US-20120070994-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND SMC3, SRSF3, SRSF9 KMT2A 342/4885MEN1 408/4885MAPT 3910/4885
US-20110143149-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP SRR, KDM2B, MSR1 KMT2A 353/4885MEN1 1606/4885MAPT 3963/4885
US-20120178261-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM STS, SI, MUS81 KMT2A 23/4885MEN1 1321/4885MAPT 2484/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.