Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CES2 | O00748 | 3/20 | 0.32 |
| ▸ | LPAR1 | Q92633 | 1/20 | 0.32 |
| ▸ | LPAR3 | Q9UBY5 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 2/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | FAAH | O00519 | 8/20 | 0.31 |
| ▸ | CES1 | P23141 | 6/20 | 0.30 |
| ▸ | THRB | P10828 | 1/20 | 0.30 |
| ▸ | MEN1 | O00255 | 1/20 | 0.30 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.30 |
| ▸ | FDPS | P14324 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6513513 | 0.92 | CES2 (0.31) | CES2LPAR1LPAR3TSHRLMNA | |
| SCHEMBL14879730 | 0.92 | CES2 (0.40) | CES2LPAR1LPAR3TSHRFAAH | |
| SCHEMBL17549734 | 0.90 | LMNA (0.32) | CES2LPAR1LPAR3LMNA | |
| SCHEMBL1703747 | 0.90 | LMNA (0.32) | CES2LPAR1LPAR3LMNA | |
| SCHEMBL1703745 | 0.90 | LMNA (0.32) | CES2LPAR1LPAR3LMNA | |
| SCHEMBL13354524 | 0.90 | LMNA (0.32) | CES2LPAR1LPAR3LMNA | |
| SCHEMBL2483152 | 0.90 | LMNA (0.32) | CES2LPAR1LPAR3LMNA | |
| SCHEMBL17549723 | 0.90 | LMNA (0.32) | CES2LPAR1LPAR3LMNA | |
| SCHEMBL8593542 | 0.90 | CES2 (0.39) | CES2LPAR1LPAR3TSHRFAAH | |
| SCHEMBL30182847 | 0.90 | CES2 (0.43) | CES2LPAR1LPAR3TSHRFAAH |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2023013697-A1 | MATERIAL FOR METAL PATTERNING, FLUORO COMPOUND, THIN FILM FOR METAL PATTERNING, ORGANIC ELECTROLUMINESCENCE DEVICE, ELECTRONIC DEVICE, AND METHOD FOR FORMING METAL PATTERN | 東ソー株式会社 | 2023-02-09 | — | — | WO | disclosed |
| US-10392699-B2 | Method for manufacturing structure having recessed pattern, resin composition, method for forming electroconductive film, electronic circuit, and electronic device | JSR CORPORATION (JP) | 2019-08-27 | — | — | US | disclosed |
| US-10032920-B2 | Thin film transistor and MOS field effect transistor that include hydrophilic/hydrophobic material, and methods for manufacturing the same | JSR CORPORATION (JP) | 2018-07-24 | — | — | US | disclosed |
| US-10032920-B2 | Thin film transistor and MOS field effect transistor that include hydrophilic/hydrophobic material, and methods for manufacturing the same | JSR CORPORATION (JP) | 2018-07-24 | — | — | US | disclosed |
| US-9980392-B2 | Process for producing substrate having wiring, radiation-sensitive composition, electronic circuit and electronic device | JSR CORPORATION (JP) | 2018-05-22 | — | — | US | disclosed |
| US-9980392-B2 | Process for producing substrate having wiring, radiation-sensitive composition, electronic circuit and electronic device | JSR CORPORATION (JP) | 2018-05-22 | — | — | US | disclosed |
| US-20170306481-A1 | METHOD FOR MANUFACTURING STRUCTURE HAVING RECESSED PATTERN, RESIN COMPOSITION, METHOD FOR FORMING ELECTROCONDUCTIVE FILM, ELECTRONIC CIRCUIT, AND ELECTRONIC DEVICE | JSR CORPORATION (JP) | 2017-10-26 | — | — | US | disclosed |
| US-20170306481-A1 | METHOD FOR MANUFACTURING STRUCTURE HAVING RECESSED PATTERN, RESIN COMPOSITION, METHOD FOR FORMING ELECTROCONDUCTIVE FILM, ELECTRONIC CIRCUIT, AND ELECTRONIC DEVICE | JSR CORPORATION (JP) | 2017-10-26 | — | — | US | disclosed |
| US-9746775-B2 | Method for manufacturing substrate having concave pattern, composition, method for forming conductive film, electronic circuit and electronic device | JSR CORPORATION (JP) | 2017-08-29 | — | — | US | disclosed |
| US-9746775-B2 | Method for manufacturing substrate having concave pattern, composition, method for forming conductive film, electronic circuit and electronic device | JSR CORPORATION (JP) | 2017-08-29 | — | — | US | disclosed |
| US-20170243980-A1 | THIN FILM TRANSISTOR AND MOS FIELD EFFECT TRANSISTOR THAT INCLUDE HYDROPHILIC/HYDROPHOBIC MATERIAL, AND METHODS FOR MANUFACTURING THE SAME | JSR CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170243980-A1 | THIN FILM TRANSISTOR AND MOS FIELD EFFECT TRANSISTOR THAT INCLUDE HYDROPHILIC/HYDROPHOBIC MATERIAL, AND METHODS FOR MANUFACTURING THE SAME | JSR CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170042038-A1 | PROCESS FOR PRODUCING SUBSTRATE HAVING WIRING, RADIATION-SENSITIVE COMPOSITION, ELECTRONIC CIRCUIT AND ELECTRONIC DEVICE | JSR CORPORATION (JP) | 2017-02-09 | — | — | US | disclosed |
| US-20170042038-A1 | PROCESS FOR PRODUCING SUBSTRATE HAVING WIRING, RADIATION-SENSITIVE COMPOSITION, ELECTRONIC CIRCUIT AND ELECTRONIC DEVICE | JSR CORPORATION (JP) | 2017-02-09 | — | — | US | disclosed |
| US-20160062242-A1 | METHOD FOR MANUFACTURING SUBSTRATE HAVING CONCAVE PATTERN, COMPOSITION, METHOD FOR FORMING CONDUCTIVE FILM, ELECTRONIC CIRCUIT AND ELECTRONIC DEVICE | JSR CORPORATION (JP) | 2016-03-03 | — | — | US | disclosed |
| US-20160062242-A1 | METHOD FOR MANUFACTURING SUBSTRATE HAVING CONCAVE PATTERN, COMPOSITION, METHOD FOR FORMING CONDUCTIVE FILM, ELECTRONIC CIRCUIT AND ELECTRONIC DEVICE | JSR CORPORATION (JP) | 2016-03-03 | — | — | US | disclosed |
| US-6383669-B1 | COMPRISING ZIRCONIUM COMPLEXES WITH A BETA-DIKETONATE AND ALKANOL GROUPS; ELECTRO-CERAMIC DEVICES THEREFROM; USE IN FERRO-ELECTRIC MEMORIES AND INFRA-RED DETECTORS; ZIRCONIUM DIISOPROPOXY BIS(TETRAMETHYLHEPTANEDIOATE) FOR EXAMPLE | THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNIC MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND (GB) | 2002-05-07 | — | — | US | disclosed |
| EP-0606252-A1 | FINE-CELLED PLASTIC FOAM CONTAINING HALOGENATED BLOWING AGENT | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1994-07-20 | — | — | EP | disclosed |
| US-5211873-A | Insulation | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1993-05-18 | — | — | US | disclosed |
| WO-1993007201-A2 | FINE-CELLED PLASTIC FOAM CONTAINING HALOGENATED BLOWING AGENT | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1993-04-15 | — | — | WO | disclosed |