SCHEMBL772102

SCHEMBL772102

CN(C)CCNC(=O)c1cc(C(=O)O)c(C(=O)NCCN(C)C)cc1C(=O)O

nearest known ligand 0.58

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
HTT P42858 2/20 0.58
SMN1; SMN2 Q16637 1/20 0.58
CYP1A2 P05177 1/20 0.54
ALDH1A1 P00352 5/20 0.49
KDM4E B2RXH2 3/20 0.49
HSD17B10 Q99714 2/20 0.49
USP2 O75604 1/20 0.48
CHEK1 O14757 1/20 0.47
MAPK1 P28482 1/20 0.46
HPGD P15428 2/20 0.46
ALOX12 P18054 1/20 0.46
HTR2C P28335 1/20 0.46
LMNA P02545 1/20 0.46
GLA P06280 1/20 0.46
GAA P10253 1/20 0.46
AOX1 Q06278 1/20 0.45
MCHR1 Q99705 1/20 0.43
RAD52 P43351 2/20 0.43
CHEK2 O96017 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL771801 0.90 KDM4E (0.57) HTTSMN1; SMN2CYP1A2ALDH1A1KDM4E
SCHEMBL2017654 0.84 HTT (0.61) HTTSMN1; SMN2CYP1A2ALDH1A1KDM4E
SCHEMBL772833 0.83 KMT2A (0.56) HTTSMN1; SMN2CYP1A2ALDH1A1KDM4E
SCHEMBL771804 0.79 HTT (0.51) HTTSMN1; SMN2CYP1A2ALDH1A1KDM4E
SCHEMBL1991981 0.79 HTT (0.55) HTTSMN1; SMN2CYP1A2ALDH1A1KDM4E
SCHEMBL19033249 0.79 HTT (0.50) HTTSMN1; SMN2ALDH1A1KDM4EHSD17B10
SCHEMBL21046542 0.78 HTT (0.66) HTTSMN1; SMN2CYP1A2ALDH1A1KDM4E
SCHEMBL17911673 0.78 HTT (0.56) HTTSMN1; SMN2ALDH1A1KDM4E
SCHEMBL6561072 0.78 HTT (0.54) HTTSMN1; SMN2CYP1A2ALDH1A1KDM4E
SCHEMBL6269732 0.78 HTT (0.65) HTTSMN1; SMN2CYP1A2ALDH1A1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7838198-B2 Photoresist compositions and method for multiple exposures with multiple layer resist systems INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-11-23 US claimed
WO-2009074522-A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-18 WO claimed
US-20090155715-A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-18 US claimed
CN-118251759-A Multi-level selective patterning for stacked device creation 杰米纳蒂奥公司 2024-06-25 CN disclosed
CN-118215986-A Chemoselective adhesion and strength promoters in semiconductor patterning 杰米纳蒂奥公司 2024-06-18 CN disclosed
CN-117941028-A Self-aligned stacking method 杰米纳蒂奥公司 2024-04-26 CN disclosed
CN-117941029-A Self-aligned high-order patterning based on anti-spacer 杰米纳蒂奥公司 2024-04-26 CN disclosed
CN-117916853-A Formation of a multi-line etched substrate 杰米纳蒂奥公司 2024-04-19 CN disclosed
CN-117916668-A Optimization for localized chemical exposure 杰米纳蒂奥公司 2024-04-19 CN disclosed
CN-117916852-A Assist feature placement in semiconductor patterning 杰米纳蒂奥公司 2024-04-19 CN disclosed
CN-117916851-A Enhanced field stitching with corrective chemistry 杰米纳蒂奥公司 2024-04-19 CN disclosed
US-7838200-B2 Photoresist compositions and method for multiple exposures with multiple layer resist systems INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-11-23 US disclosed
WO-2009074522-A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-18 WO disclosed
US-20090155715-A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-18 US disclosed
US-20090155718-A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-18 US disclosed
EP-0816419-B9 Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom DOW CORNING ASIA LTD (JP) 2003-10-22 EP disclosed
EP-0816419-B1 Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom DOW CORNING ASIA LTD (JP) 2003-03-12 EP disclosed
US-6258506-B1 USING BLEND OF BENZOIN ETHER AND FREE RADICAL POLYMERIZABLE SILICONE POLYMER DOW CORNING ASIA, LTD. (JP) 2001-07-10 US disclosed
US-6051625-A Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom DOW CORNING ASIA, LTD. (JP) 2000-04-18 US disclosed
EP-0816419-A2 Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom DOW CORNING ASIA, Ltd. (JP) 1998-01-07 EP disclosed