SCHEMBL772833

SCHEMBL772833

CN(C)CCNC(=O)c1ccccc1C(=O)O

nearest known ligand 0.61

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 1/20 0.56
APEX1 P27695 1/20 0.56
HTT P42858 3/20 0.55
SMN1; SMN2 Q16637 1/20 0.55
LMNA P02545 1/20 0.54
MAPT P10636 1/20 0.54
KDM4E B2RXH2 2/20 0.53
ALDH1A1 P00352 1/20 0.53
HSD17B10 Q99714 1/20 0.53
TSHR P16473 1/20 0.53
POLR1A O95602 1/20 0.52
MAPK1 P28482 1/20 0.51
CYP1A2 P05177 1/20 0.51
RAD52 P43351 2/20 0.51
CHEK1 O14757 1/20 0.51
HTR2C P28335 1/20 0.50
TAAR1 Q96RJ0 1/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17911673 0.94 HTT (0.56) KMT2AAPEX1HTTSMN1; SMN2KDM4E
SCHEMBL771444 0.90 HTT (0.59) KMT2AAPEX1HTTLMNAMAPT
SCHEMBL19849439 0.87 HTT (0.55) HTTSMN1; SMN2KDM4EALDH1A1HSD17B10
SCHEMBL771804 0.87 HTT (0.51) HTTSMN1; SMN2KDM4EALDH1A1HSD17B10
SCHEMBL10889755 0.84 KMT2A (0.69) KMT2AAPEX1HTTLMNAMAPT
SCHEMBL13161952 0.83 SMN1; SMN2 (0.68) KMT2AHTTSMN1; SMN2KDM4EALDH1A1
SCHEMBL8639778 0.83 NAAA (0.60) KMT2AHTTSMN1; SMN2MAPTKDM4E
SCHEMBL772102 0.83 HTT (0.58) HTTSMN1; SMN2LMNAKDM4EALDH1A1
SCHEMBL21883949 0.83 HTT (0.51) HTTSMN1; SMN2KDM4EALDH1A1HSD17B10
SCHEMBL18078987 0.83 HTT (0.51) HTTSMN1; SMN2KDM4EALDH1A1HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101884013-B Photoresist composition and multi-exposure method of multi-layer resist system IBM 2013-04-10 CN claimed
US-7838198-B2 Photoresist compositions and method for multiple exposures with multiple layer resist systems INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-11-23 US claimed
CN-101884013-A Photoresist composition and multi-exposure method of multi-layer resist system IBM 2010-11-10 CN claimed
WO-2009074522-A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-18 WO claimed
US-20090155718-A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-18 US claimed
US-20090155715-A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-18 US claimed
EP-0816419-B9 Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom DOW CORNING ASIA LTD (JP) 2003-10-22 EP claimed
EP-0816419-B1 Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom DOW CORNING ASIA LTD (JP) 2003-03-12 EP claimed
US-6258506-B1 USING BLEND OF BENZOIN ETHER AND FREE RADICAL POLYMERIZABLE SILICONE POLYMER DOW CORNING ASIA, LTD. (JP) 2001-07-10 US claimed
EP-0816419-A2 Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom DOW CORNING ASIA, Ltd. (JP) 1998-01-07 EP claimed
CN-118251759-A Multi-level selective patterning for stacked device creation 杰米纳蒂奥公司 2024-06-25 CN disclosed
CN-118215986-A Chemoselective adhesion and strength promoters in semiconductor patterning 杰米纳蒂奥公司 2024-06-18 CN disclosed
CN-117941029-A Self-aligned high-order patterning based on anti-spacer 杰米纳蒂奥公司 2024-04-26 CN disclosed
CN-117941028-A Self-aligned stacking method 杰米纳蒂奥公司 2024-04-26 CN disclosed
CN-117916852-A Assist feature placement in semiconductor patterning 杰米纳蒂奥公司 2024-04-19 CN disclosed
EP-0816419-B9 Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom DOW CORNING ASIA LTD (JP) 2003-10-22 EP disclosed
EP-0816419-B1 Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom DOW CORNING ASIA LTD (JP) 2003-03-12 EP disclosed
US-6258506-B1 USING BLEND OF BENZOIN ETHER AND FREE RADICAL POLYMERIZABLE SILICONE POLYMER DOW CORNING ASIA, LTD. (JP) 2001-07-10 US disclosed
US-6051625-A Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom DOW CORNING ASIA, LTD. (JP) 2000-04-18 US disclosed
EP-0816419-A2 Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom DOW CORNING ASIA, Ltd. (JP) 1998-01-07 EP disclosed