Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HTT | P42858 | 1/20 | 0.55 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.55 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.48 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.44 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.44 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.44 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.44 |
| ▸ | EGFR | P00533 | 1/20 | 0.43 |
| ▸ | SRC | P12931 | 1/20 | 0.43 |
| ▸ | CHEK1 | O14757 | 1/20 | 0.43 |
| ▸ | MCHR1 | Q99705 | 1/20 | 0.42 |
| ▸ | RAD52 | P43351 | 2/20 | 0.42 |
| ▸ | HPGD | P15428 | 1/20 | 0.41 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.41 |
| ▸ | POLR1A | O95602 | 1/20 | 0.41 |
| ▸ | HTR2C | P28335 | 1/20 | 0.41 |
| ▸ | AOX1 | Q06278 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL771272 | 0.91 | KDM4E (0.51) | HTTSMN1; SMN2ALDH1A1KDM4EMCHR1 | |
| SCHEMBL771804 | 0.86 | HTT (0.51) | HTTSMN1; SMN2CYP1A2MAPK1CYP2D6 | |
| SCHEMBL772833 | 0.80 | KMT2A (0.56) | HTTSMN1; SMN2CYP1A2MAPK1ALDH1A1 | |
| SCHEMBL772102 | 0.79 | HTT (0.58) | HTTSMN1; SMN2CYP1A2MAPK1ALDH1A1 | |
| SCHEMBL21046542 | 0.79 | HTT (0.66) | HTTSMN1; SMN2CYP1A2MAPK1ALDH1A1 | |
| SCHEMBL6561072 | 0.78 | HTT (0.54) | HTTSMN1; SMN2CYP1A2MAPK1ALDH1A1 | |
| SCHEMBL2017654 | 0.78 | HTT (0.61) | HTTSMN1; SMN2CYP1A2MAPK1ALDH1A1 | |
| SCHEMBL2014524 | 0.77 | HTT (0.52) | HTTSMN1; SMN2ALDH1A1KDM4EHPGD | |
| SCHEMBL18756856 | 0.76 | ALDH1A1 (0.47) | HTTSMN1; SMN2CYP1A2MAPK1CYP2D6 | |
| Dimethylaminoethanol SCHEMBL1131917 | 0.75 | MAPT (0.46) | HTTSMN1; SMN2CYP1A2MAPK1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2009074522-A1 | PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-06-18 | — | — | WO | claimed |
| CN-118251759-A | Multi-level selective patterning for stacked device creation | 杰米纳蒂奥公司 | 2024-06-25 | — | — | CN | disclosed |
| CN-118215986-A | Chemoselective adhesion and strength promoters in semiconductor patterning | 杰米纳蒂奥公司 | 2024-06-18 | — | — | CN | disclosed |
| CN-117941028-A | Self-aligned stacking method | 杰米纳蒂奥公司 | 2024-04-26 | — | — | CN | disclosed |
| CN-117941029-A | Self-aligned high-order patterning based on anti-spacer | 杰米纳蒂奥公司 | 2024-04-26 | — | — | CN | disclosed |
| CN-117916852-A | Assist feature placement in semiconductor patterning | 杰米纳蒂奥公司 | 2024-04-19 | — | — | CN | disclosed |
| CN-117916851-A | Enhanced field stitching with corrective chemistry | 杰米纳蒂奥公司 | 2024-04-19 | — | — | CN | disclosed |
| CN-117916854-A | Narrow line cutting mask method | 杰米纳蒂奥公司 | 2024-04-19 | — | — | CN | disclosed |
| CN-117916853-A | Formation of a multi-line etched substrate | 杰米纳蒂奥公司 | 2024-04-19 | — | — | CN | disclosed |
| CN-117916855-A | In-resist process for forming high density contacts | 杰米纳蒂奥公司 | 2024-04-19 | — | — | CN | disclosed |
| WO-2009074522-A1 | PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-06-18 | — | — | WO | disclosed |
| US-20090155715-A1 | PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-06-18 | — | — | US | disclosed |
| US-20060057506-A1 | Controlling resist profiles through substrate modification | GOODNER MICHAEL D | 2006-03-16 | — | — | US | disclosed |
| US-6991893-B2 | Controlling resist profiles through substrate modification | INTEL CORPORATION (US) | 2006-01-31 | — | — | US | disclosed |
| US-20040086809-A1 | Controlling resist profiles through substrate modification | INTEL CORPORATION | 2004-05-06 | — | — | US | disclosed |
| EP-0816419-B9 | Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom | DOW CORNING ASIA LTD (JP) | 2003-10-22 | — | — | EP | disclosed |
| EP-0816419-B1 | Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom | DOW CORNING ASIA LTD (JP) | 2003-03-12 | — | — | EP | disclosed |
| US-6258506-B1 | USING BLEND OF BENZOIN ETHER AND FREE RADICAL POLYMERIZABLE SILICONE POLYMER | DOW CORNING ASIA, LTD. (JP) | 2001-07-10 | — | — | US | disclosed |
| US-6051625-A | Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom | DOW CORNING ASIA, LTD. (JP) | 2000-04-18 | — | — | US | disclosed |
| EP-0816419-A2 | Ultraviolet-curable polysiloxane composition and method for the formation of cured patterns therefrom | DOW CORNING ASIA, Ltd. (JP) | 1998-01-07 | — | — | EP | disclosed |