SCHEMBL775839

SCHEMBL775839

C=CC(=O)OC12CC3CC(CC(NS(=O)(=O)C(F)(F)F)(C3)C1)C2

nearest known ligand 0.34

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
DPP8 Q6V1X1 11/20 0.34
DPP9 Q86TI2 11/20 0.34
GLMN Q92990 1/20 0.33
DPP4 P27487 5/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10169868 0.93 DPP8 (0.32) DPP8DPP9GLMNDPP4
SCHEMBL22503138 0.82 THRB (0.32)
SCHEMBL775943 0.81 DPP4 (0.34) DPP8DPP9GLMNDPP4
SCHEMBL4857036 0.80
SCHEMBL17266479 0.79 DPP8 (0.32) DPP8DPP9GLMNDPP4
SCHEMBL13445818 0.78 DPP8 (0.32) DPP8DPP9GLMNDPP4
SCHEMBL822780 0.78 ALDH1A1 (0.36) DPP8DPP9GLMN
SCHEMBL4866288 0.78
SCHEMBL2734991 0.77 DPP8 (0.40) DPP8DPP9GLMNDPP4
SCHEMBL6560094 0.76 TSHR (0.38) DPP8DPP9GLMNDPP4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9507258-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-11-29 US disclosed
US-9507258-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-11-29 US disclosed
US-9360754-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-06-07 US disclosed
US-9360754-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-06-07 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-9029067-B2 Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same JSR CORPORATION (JP) 2015-05-12 US disclosed
US-9029067-B2 Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same JSR CORPORATION (JP) 2015-05-12 US disclosed
US-20110223544-A1 RESIST PATTERN COATING AGENT AND RESIST PATTERN FORMING METHOD USING THE SAME JSR CORPORATION (JP) 2011-09-15 US disclosed
US-20110123936-A1 RESIST PATTERN COATING AGENT AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2011-05-26 US disclosed
US-20110111342-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY LIMITED (JP) 2011-05-12 US disclosed
US-20110111342-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY LIMITED (JP) 2011-05-12 US disclosed
US-20110111349-A1 RESIN COMPOSITION FOR MAKING RESIST PATTERN INSOLUBLE, AND METHOD FOR FORMATION OF RESIST PATTERN BY USING THE SAME JSR CORPORATION (JP) 2011-05-12 US disclosed
US-20100323292-A1 RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN JSR CORPORATION (JP) 2010-12-23 US disclosed
US-20100255416-A1 COMPOSITION FOR FORMING UPPER LAYER FILM FOR IMMERSION EXPOSURE, UPPER LAYER FILM FOR IMMERSION EXPOSURE, AND METHOD OF FORMING PHOTORESIST PATTERN JSR CORPORATION (JP) 2010-10-07 US disclosed
US-20100190104-A1 METHOD FOR PATTERN FORMATION AND RESIN COMPOSITION FOR USE IN THE METHOD JSR CORPORATION (JP) 2010-07-29 US disclosed
US-20100040974-A1 UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN JSR CORPORATION (JP) 2010-02-18 US disclosed
US-20100021852-A1 COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN JSR CORPORATION (JP) 2010-01-28 US disclosed