SCHEMBL775846

SCHEMBL775846

C=CC(=O)OCCNS(=O)(=O)C(F)(F)F

nearest known ligand 0.44

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TSHR P16473 6/20 0.44
ALDH1A1 P00352 4/20 0.44
TP53 P04637 3/20 0.44
HIF1A Q16665 3/20 0.44
CYP3A4 P08684 2/20 0.44
HSD17B10 Q99714 1/20 0.44
HPGD P15428 1/20 0.41
EPHX1 P07099 1/20 0.39
THRB P10828 2/20 0.38
MAPK1 P28482 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
CA1 P00915 3/20 0.33
CA2 P00918 3/20 0.33
IDO1 P14902 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10212539 0.90 TSHR (0.42) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL775539 0.90 TSHR (0.50) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL10151017 0.84 CA1 (0.41) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL325041 0.83 CA1 (0.47) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL12317976 0.83 ALDH1A1 (0.39) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL28384325 0.82 CA1 (0.46) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL10151013 0.81 TSHR (0.47) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL17039451 0.81 HCAR2 (0.41) ALDH1A1EPHX1CA1CA2IDO1
SCHEMBL20100461 0.79 TSHR (0.38) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL20100382 0.79 ALDH1A1 (0.38) TSHRALDH1A1TP53HIF1ACYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 76 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-18 US disclosed
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-18 US disclosed
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-20230314934-A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-10-05 US disclosed
US-20230213862-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-07-06 US disclosed
US-20230213862-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-07-06 US disclosed
US-20230161257-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-05-25 US disclosed
US-20230104130-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-04-06 US disclosed
US-20220214619-A1 PHOTORESIST TOPCOAT COMPOSITIONS AND PATTERN FORMATION METHODS DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC 2022-07-07 US disclosed
US-10481495-B2 Topcoat compositions containing fluorinated thermal acid generators ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-11-19 US disclosed
US-7358029-B2 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-04-15 US disclosed
US-7335456-B2 Top coat material and use thereof in lithography processes INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-02-26 US disclosed
US-7335456-B2 Top coat material and use thereof in lithography processes INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-02-26 US disclosed
US-20080038676-A1 TOP COAT MATERIAL AND USE THEREOF IN LITHOGRAPHY PROCESSES INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-02-14 US disclosed
US-20080038676-A1 TOP COAT MATERIAL AND USE THEREOF IN LITHOGRAPHY PROCESSES INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-02-14 US disclosed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US disclosed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US disclosed
US-7235342-B2 Negative photoresist composition including non-crosslinking chemistry INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-06-26 US disclosed
US-7235342-B2 Negative photoresist composition including non-crosslinking chemistry INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-06-26 US disclosed
WO-2007039346-A2 LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-04-12 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME CRY1, CCNT1, CCNA1 TSHR 3135/4885ALDH1A1 382/4885TP53 2287/4885
US-20230314934-A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS CRY1, CBR3, C1S TSHR 1483/4885ALDH1A1 810/4885TP53 1933/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.