SCHEMBL7770974

SCHEMBL7770974

C=C(C)COCCCCS(=O)(=O)O

nearest known ligand 0.37

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
CES2 O00748 2/20 0.37
APP P05067 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL973803 0.94 APP (0.37) CES2APP
SCHEMBL14894 0.86 PTGS1 (0.37) APP
Ammonia Solution, Strong SCHEMBL1302015 0.84 PTGS1 (0.36)
SCHEMBL871697 0.81 CES2 (0.44) CES2
SCHEMBL5162456 0.80 BBOX1 (0.35)
SCHEMBL37545 0.79 APP (0.48) APP
Water SCHEMBL5161722 0.79 BBOX1 (0.34)
Water SCHEMBL22773556 0.79 BBOX1 (0.34)
SCHEMBL9828311 0.77 KDM4E (0.58) CES2
SCHEMBL6259281 0.77 CES2 (0.33) CES2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1111456-A1 Method for forming an improved imaging support element including amine reactive side groups and element formed therewith EASTMAN KODAK COMPANY (US) 2001-06-27 EP claimed
US-6190842-B1 Method for forming an improved imaging support element including amine reactive side groups and element formed therewith EASTMAN KODAK COMPANY 2001-02-20 US claimed
EP-3079015-B1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK SHINETSU CHEMICAL CO (JP) 2020-04-29 EP disclosed
US-9904169-B2 Photomask blank, resist pattern forming process, and method for making photomask SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
EP-3040776-B1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK SHINETSU CHEMICAL CO (JP) 2018-01-03 EP disclosed
US-20160299431-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 US disclosed
EP-3079015-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK Shin-Etsu Chemical Co., Ltd. (JP) 2016-10-12 EP disclosed
EP-3040776-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK Shin-Etsu Chemical Co., Ltd. (JP) 2016-07-06 EP disclosed
US-20160147142-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-26 US disclosed
EP-1111456-A1 Method for forming an improved imaging support element including amine reactive side groups and element formed therewith EASTMAN KODAK COMPANY (US) 2001-06-27 EP disclosed
EP-1111455-A1 Method for forming an improved imaging support element and element formed therewith EASTMAN KODAK COMPANY (US) 2001-06-27 EP disclosed
US-6235459-B1 FORMING LAYER OVER POLYMERIC SUPPORT; HETA TREATMENT EASTMAN KODAK COMPANY 2001-05-22 US disclosed
US-6190842-B1 Method for forming an improved imaging support element including amine reactive side groups and element formed therewith EASTMAN KODAK COMPANY 2001-02-20 US disclosed