SCHEMBL7793875

SCHEMBL7793875

COc1c2c(c(OC)c3ccccc13)CC=CC2

nearest known ligand 0.61

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 2/20 0.61
ALDH1A1 P00352 2/20 0.61
MAPK1 P28482 1/20 0.61
SMN1; SMN2 Q16637 1/20 0.61
POLB P06746 1/20 0.43
CYP1A2 P05177 4/20 0.39
CYP2C9 P11712 1/20 0.39
IDO1 P14902 1/20 0.39
CYP2C19 P33261 1/20 0.38
MCL1 Q07820 1/20 0.38
ABCG2 Q9UNQ0 1/20 0.37
CA1 P00915 2/20 0.36
CA2 P00918 2/20 0.36
CA4 P22748 2/20 0.36
CA6 P23280 1/20 0.36
CA12 O43570 2/20 0.35
CA9 Q16790 2/20 0.35
LMNA P02545 2/20 0.35
CYP3A4 P08684 1/20 0.35
TSHR P16473 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30004166 1.00 KDM4E (0.61) KDM4EALDH1A1MAPK1SMN1; SMN2POLB
SCHEMBL23271839 0.89 ALDH1A1 (0.48) KDM4EALDH1A1MAPK1SMN1; SMN2POLB
SCHEMBL30003187 0.89 ALDH1A1 (0.48) KDM4EALDH1A1MAPK1SMN1; SMN2POLB
SCHEMBL23271962 0.83 SMN1; SMN2 (0.42) KDM4EALDH1A1MAPK1SMN1; SMN2CYP1A2
SCHEMBL15926953 0.83 KDM4E (0.42) KDM4EALDH1A1MAPK1SMN1; SMN2POLB
SCHEMBL30003453 0.83 SMN1; SMN2 (0.42) KDM4EALDH1A1MAPK1SMN1; SMN2CYP1A2
SCHEMBL30003482 0.78 PTGER4 (0.46) KDM4EALDH1A1MAPK1SMN1; SMN2CYP1A2
SCHEMBL23271646 0.78 PTGER4 (0.46) KDM4EALDH1A1MAPK1SMN1; SMN2CYP1A2
SCHEMBL23271852 0.77 ALDH1A1 (0.61) KDM4EALDH1A1MAPK1SMN1; SMN2POLB
SCHEMBL30003354 0.77 ALDH1A1 (0.61) KDM4EALDH1A1MAPK1SMN1; SMN2POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230400770-A1 Resist Underlayer Film Material, Patterning Process, And Method For Forming Resist Underlayer Film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 US disclosed
US-20230400770-A1 Resist Underlayer Film Material, Patterning Process, And Method For Forming Resist Underlayer Film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 US disclosed
EP-4290309-A1 RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-13 EP disclosed
US-11613509-B2 Radical polymerization control agent and radical polymerization control method KAWASAKI KASEI CHEMICALS LTD. (JP) 2023-03-28 US disclosed
EP-4012500-B1 RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHINETSU CHEMICAL CO (JP) 2023-03-01 EP disclosed
EP-3923074-B1 RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHINETSU CHEMICAL CO (JP) 2023-02-22 EP disclosed
CN-110891980-B Radical polymerization control agent and radical polymerization control method 川崎化成工业株式会社 2022-09-30 CN disclosed
EP-4012500-A1 RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM Shin-Etsu Chemical Co., Ltd. (JP) 2022-06-15 EP disclosed
US-20220163890-A1 RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-05-26 US disclosed
US-20210397092-A1 RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-12-23 US disclosed
US-20210122692-A1 RADICAL POLYMERIZATION CONTROL AGENT AND RADICAL POLYMERIZATION CONTROL METHOD KAWASAKI KASEI CHEMICALS LTD. (JP) 2021-04-29 US disclosed
CN-110891980-A Radical polymerization control agent and radical polymerization control method 川崎化成工业株式会社 2020-03-17 CN disclosed
US-20180011405-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING RESIST UNDERLAYER FILM, AND COMPOUND FOR RESIST UNDERLAYER FILM COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-11 US disclosed
JP-2001081116-A ACTIVE ENERGY RAY CURING TYPE COMPOSITION AND FORMATION OF FILM USING THE SAME COMPOSITION KANSAI PAINT CO LTD 2001-03-27 JP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11613509-B2 Radical polymerization control agent and radical polymerization control method PPOX, NOX4, CROCC KDM4E 1028/4885ALDH1A1 1023/4885MAPK1 3189/4885
US-20210122692-A1 RADICAL POLYMERIZATION CONTROL AGENT AND RADICAL POLYMERIZATION CONTROL METHOD PPOX, NOX4, CROCC KDM4E 1028/4885ALDH1A1 1023/4885MAPK1 3189/4885
US-20210397092-A1 RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM PRDM9, PRDM7, SETD7 KDM4E 254/4885ALDH1A1 4302/4885MAPK1 1252/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.