SCHEMBL7870068

SCHEMBL7870068

O=S(=O)(O)c1cc(O)ccn1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ LMNA P02545 2/20 0.38
▸ HSD17B10 Q99714 2/20 0.33
▸ HPGD P15428 1/20 0.33
▸ HIF1A Q16665 1/20 0.33
▸ COMT P21964 1/20 0.33
▸ KDM4E B2RXH2 2/20 0.32
▸ ALOX12 P18054 1/20 0.32
▸ NAPRT Q6XQN6 1/20 0.32
▸ ESR1 P03372 1/20 0.32
▸ MAOA P21397 1/20 0.32
▸ UGT1A1 P22309 1/20 0.32
▸ MAOB P27338 1/20 0.32
▸ ESR2 Q92731 1/20 0.32
▸ ALDH1A1 P00352 2/20 0.31
▸ MEN1 O00255 1/20 0.31
▸ CASP1 P29466 1/20 0.31
▸ CASP7 P55210 1/20 0.31
▸ KMT2A Q03164 1/20 0.31
▸ PTGS1 P23219 1/20 0.31
▸ CA2 P00918 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8847160 0.78 ALDH1A1 (0.41) LMNAHSD17B10HPGDKDM4ENAPRT
SCHEMBL8434248 0.77 UHRF1 (0.46) LMNAHSD17B10HPGDKDM4EALDH1A1
SCHEMBL26982439 0.77 ALDH1A1 (0.44) LMNAHSD17B10HPGDKDM4EALDH1A1
SCHEMBL28409372 0.75 NAPRT (0.31) NAPRT
Fluoride SCHEMBL27839384 0.75 UHRF1 (0.45) LMNAHSD17B10HPGDKDM4EALDH1A1
SCHEMBL8431657 0.72 NOS3 (0.48) LMNAKDM4EALDH1A1MEN1KMT2A
SCHEMBL8431694 0.72 ALDH1A1 (0.38) LMNAHSD17B10HPGDKDM4EALDH1A1
SCHEMBL3467288 0.72 CCR1 (0.52) LMNAKDM4E
SCHEMBL28270972 0.72 ALDH1A1 (0.51) KDM4EALDH1A1CA2TSHR
SCHEMBL5078530 0.71 KDM4C (0.36) LMNACA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-106933034-B Positive photoresist composition 东京应化工业株式会社 2023-01-06 — — CN disclosed
CN-1849559-B Positive photoresist composition and resist pattern formation method TOKYO OHKA KOGYO CO LTD 2010-06-16 — — CN disclosed
CN-1849559-A Positive photoresist composition and resist pattern formation TOKYO OHKA KOGYO CO LTD (JP) 2006-10-18 — — CN disclosed
US-6310214-B1 FROM HYDROXYPYRIDINESULPHONIC ACIDS COMPRISING PASSING CHLORINE GAS INTO A MIXTURE OF A HYDROXYPYRIDINESULPHONIC ACID AND OF PHOSPHORUS TRICHLORIDE; HEATING; DISTILLATION RUETGERS ORGANICS GMBH (DE) 2001-10-30 — — US disclosed
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