Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 2/20 | 0.45 |
| ▸ | LMNA | P02545 | 4/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.44 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.40 |
| ▸ | MEN1 | O00255 | 1/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.39 |
| ▸ | GAA | P10253 | 1/20 | 0.38 |
| ▸ | HTT | P42858 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL686610 | 0.90 | MEN1 (0.50) | HSD11B1LMNASMN1; SMN2KMT2AMEN1 | |
| SCHEMBL12855327 | 0.89 | MEN1 (0.41) | LMNASMN1; SMN2KMT2AMEN1ALDH1A1 | |
| SCHEMBL686558 | 0.88 | MEN1 (0.40) | LMNASMN1; SMN2KMT2AMEN1ALDH1A1 | |
| SCHEMBL2605917 | 0.88 | MEN1 (0.42) | LMNASMN1; SMN2KMT2AMEN1ALDH1A1 | |
| SCHEMBL12727402 | 0.88 | LMNA (0.41) | HSD11B1LMNASMN1; SMN2KMT2AMEN1 | |
| SCHEMBL685823 | 0.88 | LMNA (0.49) | HSD11B1LMNASMN1; SMN2KMT2AMEN1 | |
| SCHEMBL686238 | 0.87 | LMNA (0.41) | LMNASMN1; SMN2KMT2AMEN1ALDH1A1 | |
| SCHEMBL2605916 | 0.86 | MEN1 (0.39) | LMNASMN1; SMN2KMT2AMEN1ALDH1A1 | |
| SCHEMBL13483871 | 0.86 | KMT2A (0.43) | LMNASMN1; SMN2KMT2AMEN1 | |
| SCHEMBL2605915 | 0.85 | MEN1 (0.38) | LMNASMN1; SMN2KMT2AMEN1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 112 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10766992-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2020-09-08 | — | — | US | disclosed |
| US-10377692-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2019-08-13 | — | — | US | disclosed |
| US-9726976-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-08 | — | — | US | disclosed |
| US-9268226-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-23 | — | — | US | disclosed |
| US-9260407-B2 | Salt and photoresist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-16 | — | — | US | disclosed |
| US-9229320-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-01-05 | — | — | US | disclosed |
| US-9221785-B2 | Salt and photoresist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20150301451-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-22 | — | — | US | disclosed |
| US-9063414-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-06-23 | — | — | US | disclosed |
| US-9051405-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-06-09 | — | — | US | disclosed |
| US-7575850-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-18 | — | — | US | disclosed |
| US-7572570-B2 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-11 | — | — | US | disclosed |
| US-7566522-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-07-28 | — | — | US | disclosed |
| US-20080248423-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080220369-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080213695-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-04 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080176168-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-24 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-20080086014-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-04-10 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080086014-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | HCN3, SLC26A3, KCNN4 | HSD11B1 1058/4885LMNA 1982/4885SMN1; SMN2 4703/4885 |
| US-10377692-B2 | Photoresist composition | C1R, C1S, F12 | HSD11B1 3288/4885LMNA 1993/4885SMN1; SMN2 3940/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.