SCHEMBL798836

SCHEMBL798836

CCCCC(F)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.35

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.35
LMNA P02545 1/20 0.35
CES2 O00748 3/20 0.34
LPAR1 Q92633 1/20 0.34
LPAR3 Q9UBY5 1/20 0.34
FAAH O00519 8/20 0.33
THRB P10828 1/20 0.33
CES1 P23141 9/20 0.32
MEN1 O00255 1/20 0.32
CYP1A2 P05177 1/20 0.32
KMT2A Q03164 1/20 0.32
HSD17B10 Q99714 1/20 0.32
FDPS P14324 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13826935 0.91 CES2 (0.43) TSHRCES2LPAR1LPAR3FAAH
SCHEMBL799407 0.88 CES2 (0.46) TSHRCES2LPAR1LPAR3FAAH
SCHEMBL13328745 0.88 CES2 (0.46) TSHRCES2LPAR1LPAR3FAAH
SCHEMBL799458 0.88 CES2 (0.46) TSHRCES2LPAR1LPAR3FAAH
SCHEMBL17552588 0.86 CES2 (0.31) TSHRLMNACES2LPAR1LPAR3
SCHEMBL124803 0.80
SCHEMBL13859665 0.79
SCHEMBL16473079 0.78 CES2 (0.39) TSHRCES2LPAR1LPAR3FAAH
SCHEMBL18484329 0.77 CES1 (0.48) TSHRCES2LPAR1LPAR3FAAH
SCHEMBL18465760 0.77 CES1 (0.48) TSHRCES2LPAR1LPAR3FAAH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10392699-B2 Method for manufacturing structure having recessed pattern, resin composition, method for forming electroconductive film, electronic circuit, and electronic device JSR CORPORATION (JP) 2019-08-27 US disclosed
US-10032920-B2 Thin film transistor and MOS field effect transistor that include hydrophilic/hydrophobic material, and methods for manufacturing the same JSR CORPORATION (JP) 2018-07-24 US disclosed
US-10032920-B2 Thin film transistor and MOS field effect transistor that include hydrophilic/hydrophobic material, and methods for manufacturing the same JSR CORPORATION (JP) 2018-07-24 US disclosed
US-9980392-B2 Process for producing substrate having wiring, radiation-sensitive composition, electronic circuit and electronic device JSR CORPORATION (JP) 2018-05-22 US disclosed
US-9980392-B2 Process for producing substrate having wiring, radiation-sensitive composition, electronic circuit and electronic device JSR CORPORATION (JP) 2018-05-22 US disclosed
US-20170306481-A1 METHOD FOR MANUFACTURING STRUCTURE HAVING RECESSED PATTERN, RESIN COMPOSITION, METHOD FOR FORMING ELECTROCONDUCTIVE FILM, ELECTRONIC CIRCUIT, AND ELECTRONIC DEVICE JSR CORPORATION (JP) 2017-10-26 US disclosed
US-20170306481-A1 METHOD FOR MANUFACTURING STRUCTURE HAVING RECESSED PATTERN, RESIN COMPOSITION, METHOD FOR FORMING ELECTROCONDUCTIVE FILM, ELECTRONIC CIRCUIT, AND ELECTRONIC DEVICE JSR CORPORATION (JP) 2017-10-26 US disclosed
EP-2704683-B1 CHROMOPHORES WITH PERFLUOROALKYL SUBSTITUENTS BASF SE (DE) 2017-10-18 EP disclosed
US-9746775-B2 Method for manufacturing substrate having concave pattern, composition, method for forming conductive film, electronic circuit and electronic device JSR CORPORATION (JP) 2017-08-29 US disclosed
US-9746775-B2 Method for manufacturing substrate having concave pattern, composition, method for forming conductive film, electronic circuit and electronic device JSR CORPORATION (JP) 2017-08-29 US disclosed
US-20160062242-A1 METHOD FOR MANUFACTURING SUBSTRATE HAVING CONCAVE PATTERN, COMPOSITION, METHOD FOR FORMING CONDUCTIVE FILM, ELECTRONIC CIRCUIT AND ELECTRONIC DEVICE JSR CORPORATION (JP) 2016-03-03 US disclosed
US-20160062242-A1 METHOD FOR MANUFACTURING SUBSTRATE HAVING CONCAVE PATTERN, COMPOSITION, METHOD FOR FORMING CONDUCTIVE FILM, ELECTRONIC CIRCUIT AND ELECTRONIC DEVICE JSR CORPORATION (JP) 2016-03-03 US disclosed
US-8318656-B2 Production processes and systems, compositions, surfactants, monomer units, metal complexes, phosphate esters, glycols, aqueous film forming foams, and foam stabilizers E. I. DU PONT DE NEMOURS AND COMPANY (US) 2012-11-27 US disclosed
US-20120071689-A1 PRODUCTION PROCESSES AND SYSTEMS, COMPOSITIONS, SURFACTANTS, MONOMER UNITS, METAL COMPLEXES, PHOSPHATE ESTERS, GLYCOLS, AQUEOUS FILM FORMING FOAMS, AND FOAM STABILIZERS E.I. DU PONT DE NEMOURS AND COMPANY CHEMTURA CORPORATION (US) 2012-03-22 US disclosed
US-7943567-B2 Production processes and systems, compositions, surfactants, monomer units, metal complexes, phosphate esters, glycols, aqueous film forming foams, and foam stabilizers E.I. DU PONT DE NEMOURS AND COMPANY (US) 2011-05-17 US disclosed
WO-2008057128-A1 FLUOROSILICONE MATERIALS DOW CORNING CORPORATION (US) 2008-05-15 WO disclosed
US-20080009655-A1 Production Processes and Systems, Compositions, Surfactants, Monomer Units, Metal Complexes, Phosphate Esters, Glycols, Aqueous Film Forming Foams, and Foam Stabilizers E. I. DU PONT DE NEMOURS AND COMPANY 2008-01-10 US disclosed
US-20070282115-A1 Production Processes and Systems, Compositions, Surfactants, Monomer Units, Metal Complexes, Phosphate Esters, Glycols, Aqueous Film Foams, and Foam Stabilizers E. I. DU PONT DE NEMOURS AND COMPANY 2007-12-06 US disclosed
US-20070161537-A1 Production processes and systems, compositions, surfactants, monomer units, metal complexes, phosphate esters, glycols, aqueous film forming foams and foam stabilizers GREAT LAKES CHEMICAL CORPORATION (US) 2007-07-12 US disclosed
US-20070149437-A1 Production processes and systems, compositions, surfactants, monomer units, metal complexes, phosphate esters, glycols, aqueous film forming foams, and foams stabilizers E. I. DU PONT DE NEMOURS AND COMPANY 2007-06-28 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080009655-A1 Production Processes and Systems, Compositions, Surfactants, Monomer Units, Metal Complexes, Phosphate Esters, Glycols, Aqueous Film Forming Foams, and Foam Stabilizers FOS, AFF4, AFF1 TSHR 3459/4885LMNA 3987/4885CES2 1138/4885
US-20120071689-A1 PRODUCTION PROCESSES AND SYSTEMS, COMPOSITIONS, SURFACTANTS, MONOMER UNITS, METAL COMPLEXES, PHOSPHATE ESTERS, GLYCOLS, AQUEOUS FILM FORMING FOAMS, AND FOAM STABILIZERS FOS, AFF4, AFF1 TSHR 3381/4885LMNA 4081/4885CES2 1095/4885
US-20070282115-A1 Production Processes and Systems, Compositions, Surfactants, Monomer Units, Metal Complexes, Phosphate Esters, Glycols, Aqueous Film Foams, and Foam Stabilizers FOS, AFF4, AFF1 TSHR 3514/4885LMNA 4199/4885CES2 1572/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.