SCHEMBL8059970

SCHEMBL8059970

[N-]=[N+]=CS(=O)(=O)c1cccc(C(F)(F)F)c1S(=O)(=O)C1CCCCC1

nearest known ligand 0.33

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
CTSS P25774 1/20 0.32
EPHX2 P34913 1/20 0.31
CXCR2 P25025 1/20 0.31
CNR1 P21554 1/20 0.31
CNR2 P34972 1/20 0.31
COMT P21964 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3181033 0.83 CXCR2 (0.38) CXCR2COMT
SCHEMBL8041843 0.78 COMT (0.35) COMT
SCHEMBL3174665 0.77 NFE2L2 (0.34)
SCHEMBL17435204 0.76 DDR1 (0.31) COMT
SCHEMBL3175062 0.75 COMT (0.36) CTSSCXCR2COMT
SCHEMBL28166430 0.72 MEN1 (0.51) MEN1KMT2ACTSS
SCHEMBL3689443 0.68 TP53 (0.37) MEN1KMT2AEPHX2CNR1COMT
SCHEMBL5882031 0.68 COMT (0.38) MEN1KMT2AEPHX2CNR1COMT
SCHEMBL27618671 0.67 PTGS2 (0.40)
SCHEMBL30137800 0.67 KMT2A (0.40) MEN1KMT2ACTSS

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115480447-A Negative photosensitive resin composition DIC株式会社 2022-12-16 CN disclosed
CN-113348188-A Phenolic hydroxyl group-containing resin, photosensitive composition, resist film, curable composition, and cured product DIC株式会社 2021-09-03 CN disclosed
CN-108368214-B Novolac resin and resist film DIC株式会社 2021-03-23 CN disclosed
CN-108368213-B Novolac resin and resist film DIC株式会社 2020-12-18 CN disclosed
CN-110959138-A Resist material DIC株式会社 2020-04-03 CN disclosed
US-6090518-A HAVING HIGH RESOLUTION, WHICH IS USEFUL FOR A HALFMICRONLITHOGRAPHY EMPLOYING A RADIATION MITSUBISHI CHEMICAL CORPORATION (JP) 2000-07-18 US disclosed