Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 4/20 | 0.63 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.63 |
| ▸ | MEN1 | O00255 | 3/20 | 0.63 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.59 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.56 |
| ▸ | TSHR | P16473 | 1/20 | 0.56 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.56 |
| ▸ | F2 | P00734 | 2/20 | 0.55 |
| ▸ | PRSS1 | P07477 | 2/20 | 0.55 |
| ▸ | PRSS2 | P07478 | 2/20 | 0.55 |
| ▸ | PRSS3 | P35030 | 2/20 | 0.55 |
| ▸ | GAA | P10253 | 1/20 | 0.53 |
| ▸ | PKM | P14618 | 1/20 | 0.53 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.53 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.52 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.52 |
| ▸ | CXCR3 | P49682 | 1/20 | 0.52 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29040265 | 0.83 | SMN1; SMN2 (0.82) | KMT2ASMN1; SMN2MEN1KDM4EL3MBTL1 | |
| SCHEMBL11623286 | 0.83 | SMN1; SMN2 (0.82) | KMT2ASMN1; SMN2MEN1KDM4EL3MBTL1 | |
| SCHEMBL6783522 | 0.81 | SMN1; SMN2 (0.75) | KMT2ASMN1; SMN2MEN1KDM4EL3MBTL1 | |
| SCHEMBL28405676 | 0.81 | KMT2A (0.60) | KMT2ASMN1; SMN2MEN1KDM4EALDH1A1 | |
| SCHEMBL7756182 | 0.81 | SMN1; SMN2 (0.79) | KMT2ASMN1; SMN2MEN1KDM4EALDH1A1 | |
| SCHEMBL1603596 | 0.81 | SMN1; SMN2 (0.67) | KMT2ASMN1; SMN2MEN1KDM4EALDH1A1 | |
| SCHEMBL306514 | 0.81 | SMN1; SMN2 (0.67) | KMT2ASMN1; SMN2MEN1KDM4EALDH1A1 | |
| SCHEMBL158053 | 0.81 | SMN1; SMN2 (0.67) | KMT2ASMN1; SMN2MEN1KDM4EALDH1A1 | |
| SCHEMBL416659 | 0.81 | SMN1; SMN2 (0.67) | KMT2ASMN1; SMN2MEN1KDM4EALDH1A1 | |
| SCHEMBL6667166 | 0.81 | SMN1; SMN2 (0.79) | KMT2ASMN1; SMN2MEN1KDM4EALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 68 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116102680-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-02-13 | — | — | CN | claimed |
| CN-116102938-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102937-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102939-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-03 | — | — | CN | claimed |
| CN-115873176-B | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-09-26 | — | — | CN | claimed |
| CN-115873175-B | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-09-12 | — | — | CN | claimed |
| CN-116102939-A | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| CN-116102938-A | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| CN-116102680-A | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| CN-116102937-A | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| CN-118355328-A | Composition for forming resist underlayer film comprising polymer containing polycyclic aromatic group | 日产化学株式会社 | 2024-07-16 | — | — | CN | disclosed |
| CN-118339515-A | Composition for forming resist underlayer film having hydroxycinnamic acid derivative | 日产化学株式会社 | 2024-07-12 | — | — | CN | disclosed |
| CN-118215887-A | Composition for forming resist underlayer film | 日产化学株式会社 | 2024-06-18 | — | — | CN | disclosed |
| CN-118215886-A | Composition for forming alkoxy group-containing resist underlayer film | 日产化学株式会社 | 2024-06-18 | — | — | CN | disclosed |
| CN-118202304-A | Composition for forming resist underlayer film containing acrylamide group | 日产化学株式会社 | 2024-06-14 | — | — | CN | disclosed |
| CN-116102939-A | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | disclosed |
| CN-116057104-A | Composition for forming resist underlayer film | 日产化学株式会社 | 2023-05-02 | — | — | CN | disclosed |
| CN-116057095-A | Composition for forming resist underlayer film | 日产化学株式会社 | 2023-05-02 | — | — | CN | disclosed |
| US-6068962-A | NOVOLAK RESIN AS AN ALKALI-SOLUBLE COMPONENT; QUINONEDIAZIDE; ACID GENERATOR; ANTHRACENE DERIVATIVE | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2000-05-30 | — | — | US | disclosed |
| EP-0831371-A2 | Positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1998-03-25 | — | — | EP | disclosed |