Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GPR84 | Q9NQS5 | 1/20 | 0.40 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.39 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.39 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.39 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.39 |
| ▸ | CTSV | O60911 | 1/20 | 0.35 |
| ▸ | CTSL | P07711 | 1/20 | 0.35 |
| ▸ | CTSB | P07858 | 1/20 | 0.35 |
| ▸ | CTSS | P25774 | 1/20 | 0.35 |
| ▸ | CTSK | P43235 | 1/20 | 0.35 |
| ▸ | SCN9A | Q15858 | 1/20 | 0.31 |
| ▸ | TAS1R3 | Q7RTX0 | 2/20 | 0.31 |
| ▸ | TAS1R2 | Q8TE23 | 1/20 | 0.31 |
| ▸ | TAS1R1 | Q7RTX1 | 1/20 | 0.30 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11965883 | 0.83 | GPR84 (0.44) | GPR84CYP3A4CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL824248 | 0.81 | CYP3A4 (0.43) | GPR84CYP3A4CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL14982779 | 0.80 | GPR84 (0.41) | GPR84CYP3A4CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL47433 | 0.79 | GPR84 (0.39) | GPR84CYP3A4CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL19497630 | 0.75 | GPR84 (0.46) | GPR84CYP3A4CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL13614021 | 0.74 | GPR84 (0.37) | GPR84CYP3A4CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL824244 | 0.74 | EPHX2 (0.44) | EPHX2 | |
| SCHEMBL20730935 | 0.72 | GPR84 (0.50) | GPR84CYP3A4CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL8294106 | 0.72 | GPR84 (0.50) | GPR84CYP3A4CYP2D6CYP2C9CYP2C19 | |
| SCHEMBL3275189 | 0.72 | CYP3A4 (0.51) | GPR84CYP3A4CYP2D6CYP2C9CYP2C19 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 100 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9040220-B2 | Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-9034556-B2 | Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-05-19 | — | — | US | disclosed |
| US-8900788-B2 | Resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-02 | — | — | US | disclosed |
| US-8742038-B2 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-06-03 | — | — | US | disclosed |
| US-20140127626-A1 | RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT WHICH IS USED FOR FORMATION OF GUIDE PATTERN, GUIDE PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN ON LAYER CONTAINING BLOCK COPOLYMER | RIKEN (JP) | 2014-05-08 | — | — | US | disclosed |
| US-8642244-B2 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-02-04 | — | — | US | disclosed |
| US-8519073-B2 | Compound and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-08-27 | — | — | US | disclosed |
| US-8518629-B2 | Resist composition for immersion exposure and method of forming resist pattern using the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-08-27 | — | — | US | disclosed |
| US-8501387-B2 | — | — | 2013-08-06 | — | — | US | disclosed |
| US-8486606-B2 | Acrylate derivative, haloester derivative, polymer compound and photoresist composition | KURARAY CO., LTD. (JP) | 2013-07-16 | — | — | US | disclosed |
| US-20090042130-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO. LTD (JP) | 2009-02-12 | — | — | US | disclosed |
| US-7488568-B2 | Resist composition, method of forming resist pattern, compound and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-10 | — | — | US | disclosed |
| US-20090023097-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20090023095-A1 | NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20080311515-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080292988-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080268376-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080090171-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | GNG2, ACAD9, SCO2 | GPR84 742/4885CYP3A4 2148/4885CYP2D6 2023/4885 |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | RER1, ACAD9, RRS1 | GPR84 460/4885CYP3A4 1596/4885CYP2D6 1017/4885 |
| US-20090023095-A1 | NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN | C1R, CYP1B1, C1S | GPR84 1696/4885CYP3A4 523/4885CYP2D6 539/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.