Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | HTT | P42858 | 2/20 | 0.33 |
| ▸ | GLA | P06280 | 1/20 | 0.33 |
| ▸ | HPGD | P15428 | 1/20 | 0.33 |
| ▸ | HMGCR | P04035 | 6/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 6/20 | 0.33 |
| ▸ | LMNA | P02545 | 5/20 | 0.33 |
| ▸ | HIF1A | Q16665 | 4/20 | 0.33 |
| ▸ | TSHR | P16473 | 4/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.33 |
| ▸ | ABCB11 | O95342 | 3/20 | 0.33 |
| ▸ | MEN1 | O00255 | 3/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.33 |
| ▸ | ITGB2 | P05107 | 2/20 | 0.33 |
| ▸ | ICAM1 | P05362 | 2/20 | 0.33 |
| ▸ | PGR | P06401 | 2/20 | 0.33 |
| ▸ | ABCB1 | P08183 | 2/20 | 0.33 |
| ▸ | ADORA3 | P0DMS8 | 2/20 | 0.33 |
| ▸ | MAPT | P10636 | 2/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10177432 | 0.92 | ALDH1A1 (0.33) | ALDH1A1HTTGLAHPGDHMGCR | |
| SCHEMBL6367919 | 0.92 | KMT2A (0.33) | ALDH1A1HTTHMGCRCYP3A4LMNA | |
| SCHEMBL13324968 | 0.91 | HMGCR (0.31) | ALDH1A1HTTHMGCRCYP3A4LMNA | |
| SCHEMBL9924507 | 0.90 | ALDH1A1 (0.33) | ALDH1A1HTTGLAHPGDSMN1; SMN2 | |
| SCHEMBL17853802 | 0.89 | HMGCR (0.33) | ALDH1A1HTTHMGCRCYP3A4LMNA | |
| SCHEMBL12405799 | 0.89 | HMGCR (0.33) | ALDH1A1HTTHMGCRCYP3A4LMNA | |
| SCHEMBL6367915 | 0.89 | HMGCR (0.33) | ALDH1A1HTTHMGCRCYP3A4LMNA | |
| SCHEMBL12533392 | 0.88 | HMGCR (0.33) | ALDH1A1HTTHMGCRCYP3A4LMNA | |
| SCHEMBL6368305 | 0.88 | CYP3A4 (0.34) | ALDH1A1HTTHMGCRCYP3A4LMNA | |
| SCHEMBL16328887 | 0.88 | ALDH1A1 (0.34) | ALDH1A1HTTGLAHPGDSMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 308 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10018913-B2 | Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9798235-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-9790166-B2 | Polymer, monomer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-17 | — | — | US | disclosed |
| US-9758609-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9758609-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20170255098-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2017-09-07 | — | — | US | disclosed |
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9703196-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-11 | — | — | US | disclosed |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| US-20070160929-A1 | photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. | 2007-07-12 | — | — | US | disclosed |
| US-20070148594-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-06-28 | — | — | US | disclosed |
| US-20070148592-A1 | Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |
| US-20070099114-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-03 | — | — | US | disclosed |
| US-7211367-B2 | Photo acid generator, chemical amplification resist material | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-01 | — | — | US | disclosed |
| US-20070065753-A1 | Positive resist composition for immersion exposure and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-22 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-7157207-B2 | Polymer, resist material and patterning processing | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170255098-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | POLR2H, POLQ, RXRA | ALDH1A1 4816/4885HTT 1524/4885GLA 1509/4885 |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | AFF1, FASN, FAR1 | ALDH1A1 1887/4885HTT 2132/4885GLA 2640/4885 |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-2, H1-0, H1-4 | ALDH1A1 2580/4885HTT 2036/4885GLA 2233/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.