SCHEMBL825336

SCHEMBL825336

CCC(C)(C)c1ccc(OC(C)(C)C)cc1

nearest known ligand 0.58

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 3/20 0.58
RAB9A P51151 3/20 0.58
MAPT P10636 1/20 0.58
HRH3 Q9Y5N1 16/20 0.46
MAOB P27338 11/20 0.46
POLB P06746 1/20 0.44
CYP2C9 P11712 1/20 0.44
LMNA P02545 1/20 0.42
MAPK1 P28482 1/20 0.42
CASP3 P42574 1/20 0.42
ATM Q13315 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.42
SENP8 Q96LD8 1/20 0.42
SENP7 Q9BQF6 1/20 0.42
SENP6 Q9GZR1 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12201223 0.86 NPC1 (0.46) NPC1RAB9AMAPTHRH3MAOB
SCHEMBL11964382 0.85 NPC1 (0.56) NPC1RAB9AMAPTHRH3MAOB
SCHEMBL14706810 0.85 NPC1 (0.56) NPC1RAB9AMAPTHRH3MAOB
SCHEMBL12309579 0.84 NPC1 (0.47) NPC1RAB9AMAPTHRH3MAOB
SCHEMBL17552746 0.83 NPC1 (0.55) NPC1RAB9AMAPTHRH3MAOB
SCHEMBL7185797 0.83 NPC1 (0.40) NPC1RAB9AMAPTHRH3MAOB
SCHEMBL23507208 0.82 RAB9A (0.56) NPC1RAB9AMAPTPOLBCYP2C9
SCHEMBL14364648 0.82 NPC1 (0.54) NPC1RAB9AMAPTHRH3MAOB
SCHEMBL128091 0.82 NPC1 (0.81) NPC1RAB9AMAPTHRH3MAOB
SCHEMBL8764585 0.82 NPC1 (0.62) NPC1RAB9AMAPTHRH3MAOB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER MARUZEN PETROCHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20230185192-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-06-15 US disclosed
US-9971245-B2 Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-9821338-B2 Method of producing structure containing phase-separated structure utilizing a brush composition comprising PS-PMMA TOKYO OHKA KOGYO., LTD. (JP) 2017-11-21 US disclosed
US-9776208-B2 Brush composition, and method of producing structure containing phase-separated structure TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9546133-B2 Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2017-01-17 US disclosed
US-20160229939-A1 SILICON-CONTAINING POLYMER, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-20160194751-A1 BRUSH COMPOSITION, AND METHOD OF PRODUCING STRUCTURE CONTAINING PHASE-SEPARATED STRUCTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2016-07-07 US disclosed
US-20160194524-A1 BRUSH COMPOSITION AND METHOD OF PRODUCING STRUCTURE CONTAINING PHASE-SEPARATED STRUCTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2016-07-07 US disclosed
US-9248693-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-7510822-B2 Stimulation sensitive composition and compound FUJIFILM CORPORATION (JP) 2009-03-31 US disclosed
US-7441883-B2 Production process of inkjet ink composition and inkjet composition FUJIFILM CORPORATION (JP) 2008-10-28 US disclosed
US-7435527-B2 Mixture of acid generator and resin insoluble in alkaline developer and another acid decomposable compound FUJIFILM CORPORATION (JP) 2008-10-14 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-7335454-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2008-02-26 US disclosed
US-7255971-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-08-14 US disclosed
US-20070148595-A1 Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
US-7235341-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-06-26 US disclosed
US-7214467-B2 Photosensitive resin composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7202015-B2 Positive photoresist composition and pattern making method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-04-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER HAAO, HPD, IL4 NPC1 3019/4885RAB9A 4056/4885MAPT 2052/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.