SCHEMBL825450

SCHEMBL825450

CCC(C)C(=O)Oc1ccccc1C(=O)Oc1ccccc1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HSD17B10 Q99714 5/20 0.51
HPGD P15428 4/20 0.51
KMT2A Q03164 3/20 0.51
ALDH1A1 P00352 2/20 0.51
TSHR P16473 1/20 0.51
XBP1 P17861 1/20 0.51
MAPT P10636 5/20 0.49
LMNA P02545 2/20 0.48
PTGS2 P35354 1/20 0.48
ALOX15 P16050 2/20 0.47
CYP1A2 P05177 3/20 0.47
CYP2C9 P11712 3/20 0.47
CYP2C19 P33261 2/20 0.47
KDM4E B2RXH2 4/20 0.47
TDP1 Q9NUW8 1/20 0.45
NPSR1 Q6W5P4 3/20 0.45
MEN1 O00255 2/20 0.44
RECQL P46063 2/20 0.43
SLC6A3 Q01959 1/20 0.43
SMN1; SMN2 Q16637 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1914005 0.87 ALDH1A1 (0.44) HSD17B10HPGDKMT2AALDH1A1TSHR
SCHEMBL1914219 0.83 SLC6A3 (0.51) HSD17B10HPGDKMT2AALDH1A1TSHR
SCHEMBL17617137 0.83 ELANE (0.50) KMT2AALDH1A1TSHRMAPTLMNA
SCHEMBL14996055 0.83 ELANE (0.50) KMT2AALDH1A1TSHRMAPTLMNA
SCHEMBL650639 0.83 ELANE (0.50) KMT2AALDH1A1TSHRMAPTLMNA
SCHEMBL16139538 0.82 KDM4E (0.49) HSD17B10HPGDKMT2AALDH1A1TSHR
SCHEMBL825435 0.81 ELANE (0.56) HSD17B10HPGDKMT2AALDH1A1TSHR
SCHEMBL15548526 0.81 KMT2A (0.49) KMT2AALDH1A1TSHRMAPTALOX15
SCHEMBL825605 0.79 ELANE (0.53) HPGDKMT2AALDH1A1MAPTKDM4E
SCHEMBL28304235 0.79 KDM4E (0.60) HSD17B10HPGDKMT2AALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20140295332-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2014-10-02 US disclosed
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed