SCHEMBL825478

SCHEMBL825478

CCC(CC(C)c1ccc(OC(C)OCCC2CCCCC2)cc1)c1ccc(O)cc1

nearest known ligand 0.36

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.33
ESR2 Q92731 1/20 0.33
NFE2L2 Q16236 1/20 0.33
FFAR1 O14842 1/20 0.33
MIF P14174 1/20 0.32
KMT2A Q03164 2/20 0.31
MEN1 O00255 1/20 0.31
MITF O75030 1/20 0.31
PPARG P37231 1/20 0.31
PPARD Q03181 1/20 0.31
PPARA Q07869 1/20 0.31
KLK7 P49862 1/20 0.31
MAPT P10636 1/20 0.31
ALDH1A1 P00352 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.30
SLC6A2 P23975 2/20 0.30
SLC6A4 P31645 2/20 0.30
SLC6A3 Q01959 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13098465 1.00 ESR1 (0.33) ESR1ESR2NFE2L2FFAR1MIF
SCHEMBL13098486 0.93 GRIA4 (0.30) PPARGPPARDPPARA
SCHEMBL16200770 0.93 NFE2L2 (0.35) NFE2L2FFAR1KMT2AMEN1MITF
SCHEMBL16865914 0.93 NFE2L2 (0.35) NFE2L2FFAR1KMT2AMEN1MITF
SCHEMBL16865926 0.93 NFE2L2 (0.35) NFE2L2FFAR1KMT2AMEN1MITF
SCHEMBL13098474 0.91 KDM4E (0.35) FFAR1MIFKMT2AMEN1MITF
SCHEMBL13098455 0.89 FFAR1 (0.38) ESR1ESR2FFAR1KMT2AMEN1
SCHEMBL18711164 0.86 MEN1 (0.31) NFE2L2MIFKMT2AMEN1MITF
SCHEMBL13098469 0.85 ALDH1A1 (0.32) ESR1ESR2KMT2AMEN1MITF
SCHEMBL111625 0.84 ALDH1A1 (0.42) NFE2L2FFAR1KMT2AMEN1MITF

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed