SCHEMBL825481

SCHEMBL825481

CCC(C)c1cccc(OCOc2ccccc2)c1

nearest known ligand 0.55

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
HDAC4 P56524 1/20 0.45
HDAC2 Q92769 1/20 0.45
HDAC8 Q9BY41 1/20 0.45
TSHR P16473 2/20 0.44
KDM4E B2RXH2 1/20 0.44
ALDH1A1 P00352 2/20 0.44
BCHE P06276 1/20 0.43
PTGS1 P23219 2/20 0.41
MAOA P21397 1/20 0.41
LMNA P02545 1/20 0.41
ALOX5 P09917 1/20 0.40
CASR P41180 1/20 0.40
SLC7A5 Q01650 1/20 0.40
SCN4A P35499 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL825382 0.93 TSHR (0.42) HDAC4HDAC2HDAC8TSHRKDM4E
SCHEMBL11999043 0.89 HDAC4 (0.44) HDAC4HDAC2HDAC8TSHRKDM4E
SCHEMBL19445358 0.87 HDAC4 (0.45) HDAC4HDAC2HDAC8TSHRKDM4E
SCHEMBL11999045 0.86 AKR1C3 (0.48) TSHRALDH1A1PTGS1ALOX5SLC7A5
SCHEMBL825494 0.84 ALDH1A1 (0.60) TSHRALDH1A1BCHEPTGS1MAOA
SCHEMBL11922929 0.84 BCHE (0.60) BCHEMAOAALOX5
SCHEMBL28346872 0.84 BCHE (0.60) BCHEMAOAALOX5
SCHEMBL17515668 0.83 HDAC4 (0.43) HDAC4HDAC2HDAC8TSHRKDM4E
SCHEMBL825351 0.83 KCNA3 (0.44) ALDH1A1
SCHEMBL11996670 0.83 PTGS1 (0.58) HDAC4HDAC2HDAC8TSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed