SCHEMBL825351

SCHEMBL825351

CCC(C)c1cccc(OCOc2cccc3ccccc23)c1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNA3 P22001 1/20 0.44
HTR1B P28222 9/20 0.44
NR2E1 Q9Y466 4/20 0.43
SLC6A4 P31645 3/20 0.43
SLC6A2 P23975 2/20 0.43
KMT2A Q03164 1/20 0.41
CYP2D6 P10635 3/20 0.40
HTR1D P28221 2/20 0.40
CYP1A2 P05177 2/20 0.40
ADRB2 P07550 2/20 0.40
ADRB1 P08588 2/20 0.40
ADRB3 P13945 2/20 0.40
HTR2A P28223 2/20 0.40
HTR2C P28335 2/20 0.40
HTR2B P41595 2/20 0.40
HTR6 P50406 2/20 0.40
SLC10A1 Q14973 2/20 0.40
SIGMAR1 Q99720 2/20 0.40
ALDH1A1 P00352 1/20 0.40
SCN1A P35498 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL825592 0.87 HDAC4 (0.39) KMT2ACYP1A2ALDH1A1SMN1; SMN2
SCHEMBL13683035 0.87 ABCB11 (0.42) SLC6A4SLC6A2KMT2ACYP2D6CYP1A2
SCHEMBL825531 0.86 KCNA3 (0.47) KCNA3HTR1BNR2E1SLC6A4SLC6A2
SCHEMBL825481 0.83 HDAC4 (0.45) ALDH1A1
SCHEMBL14118390 0.80 NPC1 (0.54) KMT2A
SCHEMBL14118329 0.78 HTR1B (0.48) HTR1BNR2E1SLC6A4SLC6A2KMT2A
SCHEMBL14118477 0.77 CYSLTR1 (0.41) KMT2ACYP1A2ALDH1A1SMN1; SMN2
SCHEMBL19445358 0.77 HDAC4 (0.45) KMT2AALDH1A1
SCHEMBL825382 0.77 TSHR (0.42) ALDH1A1
SCHEMBL11999045 0.76 AKR1C3 (0.48) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed