SCHEMBL825382

SCHEMBL825382

CCC(C)c1cccc(OCOc2ccc(-c3ccccc3)cc2)c1

nearest known ligand 0.49

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.42
ALDH1A1 P00352 1/20 0.42
MAPT P10636 2/20 0.40
HDAC4 P56524 1/20 0.40
HDAC2 Q92769 1/20 0.40
HDAC8 Q9BY41 1/20 0.40
ALOX5 P09917 1/20 0.40
CASR P41180 1/20 0.40
KDM4E B2RXH2 1/20 0.40
RXRA P19793 1/20 0.40
RXRB P28702 1/20 0.40
FFAR4 Q5NUL3 1/20 0.39
CHRNB2 P17787 1/20 0.39
CHRNB4 P30926 1/20 0.39
CHRNA3 P32297 1/20 0.39
CHRNA7 P36544 1/20 0.39
CHRNA4 P43681 1/20 0.39
HTT P42858 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL825481 0.93 HDAC4 (0.45) TSHRALDH1A1HDAC4HDAC2HDAC8
SCHEMBL825567 0.86 ALDH1A1 (0.55) TSHRALDH1A1MAPTCHRNB2CHRNB4
SCHEMBL11999045 0.82 AKR1C3 (0.48) TSHRALDH1A1ALOX5
SCHEMBL11999043 0.82 HDAC4 (0.44) TSHRALDH1A1HDAC4HDAC2HDAC8
SCHEMBL10178709 0.82 FFAR1 (0.48) FFAR4
SCHEMBL825494 0.81 ALDH1A1 (0.60) TSHRALDH1A1MAPT
SCHEMBL19445358 0.80 HDAC4 (0.45) TSHRALDH1A1MAPTHDAC4HDAC2
SCHEMBL17515668 0.80 HDAC4 (0.43) TSHRALDH1A1HDAC4HDAC2HDAC8
SCHEMBL18092986 0.78 HDAC4 (0.51) TSHRALDH1A1HDAC4HDAC2HDAC8
SCHEMBL8729744 0.78 HDAC4 (0.51) TSHRALDH1A1HDAC4HDAC2HDAC8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed