SCHEMBL825567

SCHEMBL825567

CCC(C)c1ccc(OCOc2ccc(-c3ccccc3)cc2)cc1

nearest known ligand 0.55

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.55
TSHR P16473 1/20 0.55
SLC7A5 Q01650 1/20 0.46
MAPT P10636 2/20 0.45
NPC1 O15118 3/20 0.45
RAB9A P51151 3/20 0.45
CHRNB2 P17787 1/20 0.44
CHRNB4 P30926 1/20 0.44
CHRNA3 P32297 1/20 0.44
CHRNA7 P36544 1/20 0.44
CHRNA4 P43681 1/20 0.44
MEN1 O00255 1/20 0.43
KMT2A Q03164 1/20 0.43
TDP1 Q9NUW8 1/20 0.43
LSS P48449 1/20 0.42
SMN1; SMN2 Q16637 2/20 0.42
GRIA4 P48058 1/20 0.42
FFAR1 O14842 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL825494 0.91 ALDH1A1 (0.60) ALDH1A1TSHRSLC7A5MAPTNPC1
SCHEMBL11113379 0.88 ALDH1A1 (0.62) ALDH1A1TSHRSLC7A5MAPTNPC1
SCHEMBL825382 0.86 TSHR (0.42) ALDH1A1TSHRMAPTCHRNB2CHRNB4
SCHEMBL14118337 0.86 BCHE (0.55) ALDH1A1TSHRNPC1RAB9AFFAR1
SCHEMBL6721888 0.86 BCHE (0.55) ALDH1A1TSHRNPC1RAB9AFFAR1
SCHEMBL16687011 0.86 GRIA4 (0.51) ALDH1A1TSHRCHRNB2CHRNA4GRIA4
SCHEMBL3628638 0.86 GRIA4 (0.51) ALDH1A1TSHRCHRNB2CHRNA4GRIA4
SCHEMBL14118711 0.85 ALDH1A1 (0.48) ALDH1A1TSHRSLC7A5MAPTNPC1
SCHEMBL14118566 0.85 ALDH1A1 (0.48) ALDH1A1TSHRSLC7A5MAPTNPC1
SCHEMBL14118345 0.83 MMP2 (0.49) ALDH1A1TSHRMEN1KMT2ATDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8735048-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the composition and pattern forming method FUJIFILM CORPORATION (JP) 2014-05-27 US disclosed
US-20120301817-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-11-29 US disclosed
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed