SCHEMBL825692

SCHEMBL825692

O=S(=O)(Oc1ccc(C2CCCCC2)cc1)C(F)(F)C(F)(F)C(F)(F)SOOO

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
DRD2 P14416 1/20 0.39
DRD1 P21728 1/20 0.39
DRD4 P21917 1/20 0.39
DRD5 P21918 1/20 0.39
DRD3 P35462 1/20 0.39
LMNA P02545 1/20 0.36
HTT P42858 1/20 0.36
KDM1A O60341 1/20 0.33
THRB P10828 1/20 0.33
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
ALDH1A1 P00352 2/20 0.32
SMN1; SMN2 Q16637 2/20 0.32
MAPT P10636 1/20 0.32
ENPP3 O14638 3/20 0.32
ENPP2 Q13822 2/20 0.32
ENPP1 P22413 2/20 0.32
PDK2 Q15119 1/20 0.32
FAAH O00519 1/20 0.31
CASP1 P29466 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8737656 0.91 DRD2 (0.41) DRD2DRD1DRD4DRD5DRD3
SCHEMBL12254590 0.87 DRD2 (0.41) DRD2DRD1DRD4DRD5DRD3
SCHEMBL13243369 0.85 DRD2 (0.42) DRD2DRD1DRD4DRD5DRD3
SCHEMBL13632981 0.85 LMNA (0.42) LMNAHTTKDM1ATHRBMEN1
SCHEMBL20346427 0.83
SCHEMBL14072863 0.82 LMNA (0.41) LMNAHTTKDM1AMEN1KMT2A
SCHEMBL1687750 0.80 DRD2 (0.46) DRD2DRD1DRD4DRD5DRD3
SCHEMBL2887915 0.80 DRD2 (0.45) DRD2DRD1DRD4DRD5DRD3
SCHEMBL6047885 0.79 DRD2 (0.44) DRD2DRD1DRD4DRD5DRD3
SCHEMBL110631 0.79 DRD2 (0.47) DRD2DRD1DRD4DRD5DRD3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 114 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9081279-B2 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2015-07-14 US disclosed
US-8877421-B2 Positive resist composition and pattern-forming method FUJIFILM CORPORATION (JP) 2014-11-04 US disclosed
US-8852847-B2 Method of forming patterns FUJIFILM CORPORATION (JP) 2014-10-07 US disclosed
US-8852845-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method using the same, and resin FUJIFILM CORPORATION (JP) 2014-10-07 US disclosed
US-20140134541-A1 POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2014-05-15 US disclosed
US-8697329-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-04-15 US disclosed
US-8679724-B2 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2014-03-25 US disclosed
US-20140057209-A1 METHOD OF FORMING PATTERNS FUJIFILM CORPORATION (JP) 2014-02-27 US disclosed
US-8642245-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming a pattern using the same FUJIFILM CORPORATION (JP) 2014-02-04 US disclosed
US-8637229-B2 Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method FUJIFILM CORPORATION (JP) 2014-01-28 US disclosed
US-20070172769-A1 Pattern forming method FUJIFILM CORPORATION (JP) 2007-07-26 US disclosed
US-20070148589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
US-20070148595-A1 Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
US-20070134588-A1 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed
US-20070134589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed
US-20070134590-A1 Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent FUJIFILM CORPORATION. (JP) 2007-06-14 US disclosed
US-20070105045-A1 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION 2007-05-10 US disclosed
US-20070077519-A1 Pattern forming method and resist composition used therefor FUJI PHOTO FILM CO., LTD. 2007-04-05 US disclosed
US-20070065752-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-22 US disclosed
US-20070054217-A1 Positive photosensitive composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-08 US disclosed