SCHEMBL837629

SCHEMBL837629

CC(CCc1ccccc1)O[SiH3]

nearest known ligand 0.56

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.44
POLB P06746 1/20 0.43
KMT2A Q03164 3/20 0.42
MEN1 O00255 2/20 0.42
ALDH1A1 P00352 1/20 0.42
CYP1A2 P05177 1/20 0.42
CYP2C9 P11712 1/20 0.42
CYP2C19 P33261 1/20 0.42
HTT P42858 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.42
HPGD P15428 1/20 0.42
OPRK1 P41145 1/20 0.41
KDM4E B2RXH2 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3342120 0.88 SIGMAR1 (0.43)
SCHEMBL3482591 0.86 SIGMAR1 (0.45)
SCHEMBL585331 0.83 TSHR (0.47) TSHRPOLBKMT2AMEN1ALDH1A1
SCHEMBL13626178 0.81 TSHR (0.46) TSHRPOLBKMT2AMEN1ALDH1A1
SCHEMBL820953 0.81 TSHR (0.46) TSHRPOLBKMT2AMEN1ALDH1A1
SCHEMBL2239544 0.80 SIGMAR1 (0.54) KMT2AMEN1OPRK1
SCHEMBL14841789 0.80 MEN1 (0.42) TSHRPOLBKMT2AMEN1ALDH1A1
SCHEMBL14118736 0.78 BCHE (0.46) TSHRPOLBKMT2AMEN1ALDH1A1
SCHEMBL104982 0.78 TSHR (0.43) TSHRPOLBKMT2AMEN1ALDH1A1
SCHEMBL17929078 0.78 SMN1; SMN2 (0.46) TSHRPOLBKMT2AMEN1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
EP-1904415-B1 HYDROPHOBING MINERALS AND FILLER MATERIALS DOW CORNING (US) 2014-03-12 EP disclosed
EP-2625233-A1 BIODEGRADABLE HYDROPHOBIC CELLULOSIC SUBSTRATES AND METHODS FOR THEIR PRODUCTION USING REACTIVE SILANES Dow Corning Corporation (US) 2013-08-14 EP disclosed
US-20130190429-A1 Biodegradable Hydrophobic Cellulosic Substrates And Methods For Their Production Using Reactive Silanes DOW CORNING CORPORATION (US) 2013-07-25 US disclosed
WO-2012047312-A1 BIODEGRADABLE HYDROPHOBIC CELLULOSIC SUBSTRATES AND METHODS FOR THEIR PRODUCTION USING REACTIVE SILANES DOW CORNING CORPORATION (US) 2012-04-12 WO disclosed
US-8142856-B2 Preparing hydrolyzate containing polysiloxanes by hydrolyzing hydrolysable silane or hydrolysable silane mixture in presence of acid hydrolysis catalyst andcombining polysiloxane hydrolyzate with mineral and/or filler and optionally with water and/or a catalyst for condensation of the hydrolyzate DOW CORNING CORPORATION (US) 2012-03-27 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20080286474-A1 Hydrophobing Minerals and Filler Materials DOW SILICONES CORPORATION 2008-11-20 US disclosed
EP-1904415-A2 HYDROPHOBING MINERALS AND FILLER MATERIALS Dow Corning Corporation (US) 2008-04-02 EP disclosed
WO-2007009935-A2 HYDROPHOBING MINERALS AND FILLER MATERIALS DOW CORNING CORPORATION (US) 2007-01-25 WO disclosed
EP-1006118-B1 Method for synthesizing organosilicon compounds that contain a group bonded to silicon across the SI-C bond DOW CORNING ASIA LTD (JP) 2003-05-07 EP disclosed
US-6191220-B1 REACTING POLYMER HAVING OLEFINIC OR ACETYLENIC UNSATURATED GROUPS WITH HYDRIDE (HYDROCARBONOXY) SILANE IN PRESENCE OF PLATINUM OR PLATINUM COMPOUND CATALYST AND SILYLATED CARBOXYLIC ACID TO FORM HYDROCARBONOXYSILYL FUNCTIONAL POLYMER DOW CORNING ASIA, LTD. (JP) 2001-02-20 US disclosed
US-6111126-A Method for synthesizing organosilicon compounds that contain a functional group bonded to silicon across the Si-C bond DOW CORNING ASIA, LTD. (JP) 2000-08-29 US disclosed
EP-1006118-A2 Method for synthesizing organosilicon compounds that contain a group bonded to silicon across the SI-C bond Dow Corning Asia, Ltd. (JP) 2000-06-07 EP disclosed
US-5994573-A Method for making triarylamine compounds having hydrocarbonoxysilyl groups DOW CORNING ASIA, LTD. (JP) 1999-11-30 US disclosed
US-5986124-A Method for making compounds containing hydrocarbonoxysilyi groups by hydrosilylation using hydrido (hydrocarbonoxy) silane compounds DOW CORNING ASIA, LTD. (JP) 1999-11-16 US disclosed