SCHEMBL3482591

SCHEMBL3482591

CC(CCCCc1ccccc1)O[SiH3]

nearest known ligand 0.49

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 8/20 0.45
L3MBTL1 Q9Y468 1/20 0.44
NAAA Q02083 1/20 0.44
MAOA P21397 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3342120 0.94 SIGMAR1 (0.43) SIGMAR1L3MBTL1
SCHEMBL837629 0.86 TSHR (0.44)
SCHEMBL3643181 0.83 SIGMAR1 (0.49) SIGMAR1L3MBTL1MAOA
SCHEMBL11243376 0.79 SIGMAR1 (0.45) SIGMAR1L3MBTL1NAAA
SCHEMBL9233304 0.79 SIGMAR1 (0.46) SIGMAR1L3MBTL1
SCHEMBL105419 0.78 LMNA (0.53) SIGMAR1L3MBTL1MAOA
SCHEMBL10523450 0.77 NAAA (0.44) SIGMAR1L3MBTL1NAAA
SCHEMBL1837086 0.77 NAAA (0.56) NAAA
SCHEMBL10523459 0.77 NAAA (0.47) SIGMAR1L3MBTL1NAAA
SCHEMBL7181668 0.77 PDE4A (0.46) SIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed