⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL22263206 | 0.98 | — | — | |
| SCHEMBL15524288 | 0.98 | — | — | |
| SCHEMBL65537 | 0.93 | — | — | |
| SCHEMBL704741 | 0.87 | — | — | |
| SCHEMBL558284 | 0.85 | — | — | |
| SCHEMBL17373020 | 0.85 | — | — | |
| SCHEMBL1920971 | 0.85 | — | — | |
| SCHEMBL375788 | 0.82 | — | — | |
| SCHEMBL646422 | 0.82 | — | — | |
| SCHEMBL380033 | 0.77 | ALDH1A1 (0.42) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4735661-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON METAL SUBSTRATE | GELEST, INC. (US) | 2026-05-06 | — | — | EP | claimed |
| US-12381076-B2 | Inherent area selective deposition of silicon-containing dielectric on metal substrate | GELEST, INC. (US) | 2025-08-05 | — | — | US | claimed |
| US-20250095982-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON METAL SUBSTRATE | GELEST, INC. | 2025-03-20 | — | — | US | claimed |
| WO-2025053926-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON METAL SUBSTRATE | GELEST, INC. (US) | 2025-03-13 | — | — | WO | claimed |
| EP-4735661-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON METAL SUBSTRATE | GELEST, INC. (US) | 2026-05-06 | — | — | EP | disclosed |
| US-12381076-B2 | Inherent area selective deposition of silicon-containing dielectric on metal substrate | GELEST, INC. (US) | 2025-08-05 | — | — | US | disclosed |
| US-20250095982-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON METAL SUBSTRATE | GELEST, INC. | 2025-03-20 | — | — | US | disclosed |
| WO-2025053926-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON METAL SUBSTRATE | GELEST, INC. (US) | 2025-03-13 | — | — | WO | disclosed |
| EP-0946650-A1 | AQUEOUS FLUOROCHEMICAL COMPOSITIONS | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1999-10-06 | — | — | EP | disclosed |
| US-5888290-A | WATER AND OIL REPELLENTS; ANTISOILANTS | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1999-03-30 | — | — | US | disclosed |
| WO-1998028368-A1 | AQUEOUS FLUOROCHEMICAL COMPOSITIONS | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1998-07-02 | — | — | WO | disclosed |
| US-5760126-A | WATER SOLUBLE OR WATER DISPERSIBLE POLYMER, COLLOIDAL SOL; WEAR RESISTANCE | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1998-06-02 | — | — | US | disclosed |
| EP-0837963-A1 | COMPOSITION AND PROCESS FOR IMPARTING DURABLE REPELLENCY TO SUBSTRATES | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1998-04-29 | — | — | EP | disclosed |
| WO-1997000995-A1 | COMPOSITION AND PROCESS FOR IMPARTING DURABLE REPELLENCY TO SUBSTRATES | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1997-01-09 | — | — | WO | disclosed |