Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10035497 | 0.81 | CA1 (0.40) | — | |
| SCHEMBL13028429 | 0.76 | SMN1; SMN2 (0.31) | SMN1; SMN2 | |
| SCHEMBL9640386 | 0.76 | SMN1; SMN2 (0.40) | SMN1; SMN2 | |
| SCHEMBL9640383 | 0.76 | SMN1; SMN2 (0.40) | SMN1; SMN2 | |
| SCHEMBL22714779 | 0.72 | POLB (0.32) | — | |
| SCHEMBL29511512 | 0.72 | POLB (0.32) | — | |
| SCHEMBL14593908 | 0.70 | HTT (0.33) | SMN1; SMN2 | |
| SCHEMBL5848871 | 0.69 | SMN1; SMN2 (0.32) | SMN1; SMN2 | |
| SCHEMBL7111678 | 0.69 | SMN1; SMN2 (0.32) | SMN1; SMN2 | |
| SCHEMBL9908420 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240231228-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-07-11 | — | — | US | disclosed |
| US-20240231228-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-07-11 | — | — | US | disclosed |
| US-20240231225-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-07-11 | — | — | US | disclosed |
| US-20240231225-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-07-11 | — | — | US | disclosed |
| EP-4394508-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | Samsung Electronics Co., Ltd. (KR) | 2024-07-03 | — | — | EP | disclosed |
| US-11970557-B2 | Polymer containing photoacid generator | LG CHEM, LTD. (KR) | 2024-04-30 | — | — | US | disclosed |
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-07 | — | — | US | disclosed |
| US-11693314-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| US-20220155688-A1 | ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2022-05-19 | — | — | US | disclosed |
| CN-111699206-B | Polymers comprising photoacid generators | 株式会社LG化学 | 2022-05-10 | — | — | CN | disclosed |
| US-20150322212-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-20150316849-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ESTER GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-11-05 | — | — | US | disclosed |
| US-8778575-B2 | Curable composition, color filter using the same and manufacturing method therefor, and solid image pickup element | FUJIFILM CORPORATION (JP) | 2014-07-15 | — | — | US | disclosed |
| US-8778575-B2 | Curable composition, color filter using the same and manufacturing method therefor, and solid image pickup element | FUJIFILM CORPORATION (JP) | 2014-07-15 | — | — | US | disclosed |
| US-8129099-B2 | Double patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-06 | — | — | US | disclosed |
| US-8129099-B2 | Double patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-06 | — | — | US | disclosed |
| US-20090208886-A1 | DOUBLE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-20090208886-A1 | DOUBLE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-20080171272-A1 | CURABLE COMPOSITION, COLOR FILTER USING THE SAME AND MANUFACTUIRNG METHOD THEREFOR, AND SOLID IMAGE PICKUP ELEMENT | FUJIFILM CORPORATION (JP) | 2008-07-17 | — | — | US | disclosed |
| US-7163778-B2 | Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20150322212-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP | ASH2L, SRRM2, CCNT1 | SMN1; SMN2 4022/4885 |
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | EIF2B1, EIF2B5, EIF2B3 | SMN1; SMN2 2816/4885 |
| US-11693314-B2 | Resist composition and patterning process | EIF2B1, EIF2B5, EIF2B3 | SMN1; SMN2 2816/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.