SCHEMBL860908

SCHEMBL860908

ClCOC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 2/20 0.38
GRIN2D O15399 4/20 0.35
GRIN3B O60391 4/20 0.35
GRIN1 Q05586 4/20 0.35
GRIN2A Q12879 4/20 0.35
GRIN2B Q13224 4/20 0.35
GRIN2C Q14957 4/20 0.35
GRIN3A Q8TCU5 4/20 0.35
LMNA P02545 4/20 0.33
SLC22A2 O15244 1/20 0.33
SLC22A1 O15245 1/20 0.33
TSHR P16473 1/20 0.33
NFKB1 P19838 1/20 0.33
STAT6 P42226 1/20 0.33
SLC47A1 Q96FL8 1/20 0.33
SIGMAR1 Q99720 1/20 0.33
ALDH1A1 P00352 3/20 0.33
MEN1 O00255 1/20 0.33
HTT P42858 1/20 0.33
KMT2A Q03164 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4340777 0.80 NPSR1 (0.47) NPSR1LMNATSHRALDH1A1MEN1
SCHEMBL4253114 0.79
SCHEMBL13998863 0.77 PKM (0.42) ALDH1A1RAB9A
SCHEMBL2546505 0.74 NPSR1 (0.43) NPSR1GRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL2546508 0.74 NPSR1 (0.38) NPSR1GRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL18643624 0.74 NPSR1 (0.38) NPSR1GRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL270387 0.74 NPSR1 (0.43) NPSR1GRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL386960 0.74 NPSR1 (0.38) NPSR1GRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL4807262 0.73 NPSR1 (0.31) NPSR1ALDH1A1MEN1HTTKMT2A
SCHEMBL13980107 0.73 GRIN2D (0.31) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080318156-A1 Adamantane Based Molecular Glass Photoresists for Sub-200 Nm Lithography CORNELL RESEARCH FOUNDATION, INC. 2008-12-25 US claimed
EP-1991910-A1 ADAMANTANE BASED MOLECULAR GLASS PHOTORESISTS FOR SUB-200 NM LITHOGRAPHY Cornell Research Foundation, Inc. (US) 2008-11-19 EP claimed
WO-2007094784-A1 ADAMANTANE BASED MOLECULAR GLASS PHOTORESISTS FOR SUB-200 NM LITHOGRAPHY CORNELL RESEARCH FOUNDATION, INC. (US) 2007-08-23 WO claimed
US-8889333-B2 Salt, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-11-18 US disclosed
US-8889333-B2 Salt, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-11-18 US disclosed
EP-2433972-B1 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2014-11-12 EP disclosed
EP-1717261-B1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2014-01-01 EP disclosed
US-8574809-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-11-05 US disclosed
US-20120264060-A1 SALT, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-18 US disclosed
US-20120264060-A1 SALT, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-18 US disclosed
EP-2433972-A1 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern Tokyo Ohka Kogyo Co., Ltd. (JP) 2012-03-28 EP disclosed
EP-1602976-B1 Resist material and pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2007-01-17 EP disclosed
EP-1717261-A1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-11-02 EP disclosed
US-20050277057-A1 Resist material and pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-12-15 US disclosed
EP-1602976-A1 Resist material and pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-12-07 EP disclosed
US-20050266338-A1 Resist material and pattern formation method PANASONIC CORPORATION (JP) 2005-12-01 US disclosed
US-20050266337-A1 Resist material and pattern formation method PANNOVA SEMIC, LLC 2005-12-01 US disclosed
EP-1517181-A1 Sulfonamide compound, polymer compound, reist material and pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-03-23 EP disclosed
US-20050058935-A1 Sulfonamide compound, polymer compound, resist material and pattern formation method TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2005-03-17 US disclosed
US-6270942-B1 PHOTOSENSITVE POLYMER CONTAINING NORBORNENE UNITS, MALEIC ANHYDRIDE UNITS AND UNSATURATED ESTER SAMSUNG ELECTRONICS CO., LTD (KR) 2001-08-07 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120264060-A1 SALT, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN C1S, C1R, CLIC1 NPSR1 348/4885GRIN2D 1201/4885GRIN3B 1932/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.