Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | RXRA | P19793 | 7/20 | 0.60 |
| ▸ | RXRB | P28702 | 6/20 | 0.60 |
| ▸ | EGFR | P00533 | 1/20 | 0.56 |
| ▸ | RXRG | P48443 | 2/20 | 0.55 |
| ▸ | ERN1 | O75460 | 3/20 | 0.50 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.50 |
| ▸ | BCL2L1 | Q07817 | 1/20 | 0.50 |
| ▸ | BAD | Q92934 | 1/20 | 0.50 |
| ▸ | TPMT | P51580 | 1/20 | 0.50 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.50 |
| ▸ | LMNA | P02545 | 1/20 | 0.50 |
| ▸ | TP53 | P04637 | 1/20 | 0.48 |
| ▸ | TSHR | P16473 | 1/20 | 0.48 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18643044 | 0.93 | RXRA (0.58) | RXRARXRBEGFRRXRGERN1 | |
| SCHEMBL22734016 | 0.80 | EGFR (0.72) | RXRARXRBEGFRRXRGHSD17B10 | |
| SCHEMBL21133280 | 0.80 | EGFR (0.72) | RXRARXRBEGFRRXRGHSD17B10 | |
| SCHEMBL864660 | 0.80 | EGFR (0.72) | RXRARXRBEGFRRXRGHSD17B10 | |
| SCHEMBL30610360 | 0.80 | EGFR (0.72) | RXRARXRBEGFRRXRGHSD17B10 | |
| SCHEMBL23202431 | 0.80 | EGFR (0.72) | RXRARXRBEGFRRXRGHSD17B10 | |
| SCHEMBL142861 | 0.80 | EGFR (0.72) | RXRARXRBEGFRRXRGHSD17B10 | |
| SCHEMBL21133337 | 0.80 | EGFR (0.72) | RXRARXRBEGFRRXRGHSD17B10 | |
| SCHEMBL30610361 | 0.80 | EGFR (0.72) | RXRARXRBEGFRRXRGHSD17B10 | |
| SCHEMBL18687046 | 0.80 | EGFR (0.72) | RXRARXRBEGFRRXRGHSD17B10 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| EP-3062151-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-05-05 | — | — | EP | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| EP-2080750-B1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-07-29 | — | — | EP | disclosed |
| US-10642156-B2 | Resist base material, resist composition and method for forming resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-05-05 | — | — | US | disclosed |
| US-10437148-B2 | Resist material, resist composition and method for forming resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-10-08 | — | — | US | disclosed |
| EP-2743249-B1 | CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2019-07-24 | — | — | EP | disclosed |
| US-20180107113-A1 | RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-04-19 | — | — | US | disclosed |
| US-20180074402-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-15 | — | — | US | disclosed |
| US-9897913-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-20170145142-A1 | RESIST MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-05-25 | — | — | US | disclosed |
| EP-2743769-B1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYPHENOL COMPOUND USED THEREIN, AND ALCOHOL COMPOUND CAPABLE OF BEING DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2017-03-22 | — | — | EP | disclosed |
| EP-3141957-A1 | RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2017-03-15 | — | — | EP | disclosed |
| EP-0802798-A1 | METHOD AND COMPOSITIONS FOR INCREASING THE SERUM HALF-LIFE OF PHARMACOLOGICALLY ACTIVE AGENTS | CHIRON CORPORATION (US) | 1997-10-29 | — | — | EP | disclosed |
| WO-1995022992-A1 | METHOD AND COMPOSITIONS FOR INCREASING THE SERUM HALF-LIFE OF PHARMACOLOGICALLY ACTIVE AGENTS | CHIRON CORPORATION (US) | 1995-08-31 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | RXRA 456/4885RXRB 592/4885EGFR 921/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | RXRA 451/4885RXRB 572/4885EGFR 1076/4885 |
| US-20180074402-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | SLC11A2, ABCC1, FBL | RXRA 298/4885RXRB 403/4885EGFR 4117/4885 |
| US-20180107113-A1 | RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | CROCC, REV1, PARG | RXRA 825/4885RXRB 1084/4885EGFR 4019/4885 |
| US-10642156-B2 | Resist base material, resist composition and method for forming resist pattern | CROCC, REV1, PARG | RXRA 825/4885RXRB 1084/4885EGFR 4019/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.