SCHEMBL879070

SCHEMBL879070

CCC(C)(C)C(=O)OC1(C)CC(=O)OC1C

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HMGCR P04035 4/20 0.33
CYP3A4 P08684 3/20 0.33
USP2 O75604 2/20 0.33
ALDH1A1 P00352 2/20 0.33
TSHR P16473 2/20 0.33
KDM4E B2RXH2 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
NR1I2 O75469 1/20 0.33
ABCB11 O95342 1/20 0.33
NR3C1 P04150 1/20 0.33
PGR P06401 1/20 0.33
ABCB1 P08183 1/20 0.33
ADORA3 P0DMS8 1/20 0.33
CYP2C8 P10632 1/20 0.33
CHRM1 P11229 1/20 0.33
ADRB3 P13945 1/20 0.33
GABRA1 P14867 1/20 0.33
ADRA2B P18089 1/20 0.33
ADRA2C P18825 1/20 0.33
DRD1 P21728 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17245079 1.00 HMGCR (0.33) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL20306544 0.89
SCHEMBL18845072 0.86
SCHEMBL17300314 0.84 CYP3A4 (0.31) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL17300291 0.82 CYP3A4 (0.32) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL17300310 0.82 CYP3A4 (0.30) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL19120085 0.82 PRKCA (0.32)
SCHEMBL17300297 0.82 CCR2 (0.32) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL15616081 0.80
SCHEMBL17300311 0.80 HMGCR (0.32) HMGCRCYP3A4USP2ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 184 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230400768-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN JSR CORPORATION (JP) 2023-12-14 US disclosed
US-20230400767-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-12-14 US disclosed
US-20230244143-A9 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND JSR CORPORATION (JP) 2023-08-03 US disclosed
US-20230236506-A2 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN JSR CORPORATION (JP) 2023-07-27 US disclosed
US-20230205082-A9 RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2023-06-29 US disclosed
US-11687003-B2 Negative resist pattern-forming method, and composition for upper layer film formation JSR CORPORATION (JP) 2023-06-27 US disclosed
US-20230137472-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-10018911-B2 Chemically amplified resist material and resist pattern-forming method JSR CORPORATION (JP) 2018-07-10 US disclosed
US-10012903-B2 Resist composition and pattern forming process SHIN-ESTU CHEMICAL CO., LTD. (JP) 2018-07-03 US disclosed
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7214733-B2 Positive type resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-05-08 US disclosed
US-7214733-B2 Positive type resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-05-08 US disclosed
US-7192681-B2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-7192681-B2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230400767-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND RER1, RAD51, RFT1 HMGCR 2954/4885CYP3A4 3647/4885USP2 3559/4885
US-10018911-B2 Chemically amplified resist material and resist pattern-forming method SLC11A2, XRCC5, RAD54L HMGCR 3605/4885CYP3A4 3044/4885USP2 4301/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.