SCHEMBL8932197

SCHEMBL8932197

Cc1cccc(C)c1C(O)c1c(C)cccc1C

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.48
CA1 P00915 2/20 0.48
CA2 P00918 2/20 0.48
CA7 P43166 2/20 0.48
CA9 Q16790 2/20 0.48
CYP2A6 P11509 2/20 0.43
CYP1A2 P05177 1/20 0.43
TSHR P16473 2/20 0.42
ACHE P22303 2/20 0.42
TRPA1 O75762 2/20 0.42
ATM Q13315 2/20 0.42
CD44 P16070 1/20 0.36
GABRA1 P14867 1/20 0.36
GABRB2 P47870 1/20 0.36
GAA P10253 1/20 0.35
KDM4E B2RXH2 2/20 0.34
HPGD P15428 1/20 0.34
HSD17B10 Q99714 1/20 0.34
MEN1 O00255 1/20 0.34
HSP90AA1 P07900 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL578005 0.80 CA1 (0.46) ALDH1A1CA1CA2CA7CA9
SCHEMBL18535879 0.79 KDM4E (0.43) ALDH1A1CA1CA2CA7CA9
SCHEMBL12238610 0.76 CA1 (0.42) ALDH1A1CA1CA2CA7CA9
SCHEMBL24146014 0.74 ALDH1A1 (0.40) ALDH1A1CA1CA2CA7CA9
SCHEMBL11877948 0.73 CA1 (0.50) ALDH1A1CA1CA2CA7CA9
SCHEMBL598366 0.73 CA1 (0.50) ALDH1A1CA1CA2CA7CA9
SCHEMBL5735343 0.72 TSHR (0.46) ALDH1A1CA1CA2CA7CA9
SCHEMBL18567608 0.72 CA1 (0.39) ALDH1A1CA1CA2CA7CA9
SCHEMBL24804430 0.72 ALDH1A1 (0.39) ALDH1A1CA1CA2CA7CA9
SCHEMBL19287011 0.72 CD44 (0.50) ALDH1A1CA1CA2CA7CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10025187-B2 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting TOKYO ELECTRON LIMITED (JP) 2018-07-17 US disclosed
US-10018911-B2 Chemically amplified resist material and resist pattern-forming method JSR CORPORATION (JP) 2018-07-10 US disclosed
US-9971247-B2 Pattern-forming method OSAKA UNIVERSITY (JP) 2018-05-15 US disclosed
US-9971247-B2 Pattern-forming method OSAKA UNIVERSITY (JP) 2018-05-15 US disclosed
US-20170131633-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-05-11 US disclosed
US-20170131633-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-05-11 US disclosed
US-20170075221-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-03-16 US disclosed
US-20170075221-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-03-16 US disclosed
EP-3141958-A2 CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD JSR Corporation (JP) 2017-03-15 EP disclosed
US-20170052450-A1 PATTERN-FORMING METHOD OSAKA UNIVERSITY (JP) 2017-02-23 US disclosed
US-20170052450-A1 PATTERN-FORMING METHOD OSAKA UNIVERSITY (JP) 2017-02-23 US disclosed
US-20170052448-A1 RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL OSAKA UNIVERSITY (JP) 2017-02-23 US disclosed
US-20170052448-A1 RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL OSAKA UNIVERSITY (JP) 2017-02-23 US disclosed
EP-3133444-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND OSAKA UNIVERSITY (JP) 2017-02-22 EP disclosed
US-20160357103-A1 PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING TOKYO ELECTRON LIMITED (JP) 2016-12-08 US disclosed
US-5502025-A ANTIDOTES FOR HERBICIDES AND PLANT SAFTENING AGENTS MONSANTO COMPANY (US) 1996-03-26 US disclosed
US-5321000-A Benzhydryl compounds as herbicide antidotes MONSANTO COMPANY (US) 1994-06-14 US disclosed
US-5162537-A To safen acetamide herbicids used to control grassy and broadleaf weeds in rice, sorghum and wheat MONSANTO COMPANY (US) 1992-11-10 US disclosed
US-4964893-A REDUCING INJURY TO A CROP PLANT MONSANTO COMPANY (US) 1990-10-23 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10025187-B2 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting ASIC1, ASIC3, CLTA ALDH1A1 1963/4885CA1 50/4885CA2 53/4885
US-10018911-B2 Chemically amplified resist material and resist pattern-forming method SLC11A2, XRCC5, RAD54L ALDH1A1 2183/4885CA1 203/4885CA2 529/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.