SCHEMBL905424

SCHEMBL905424

CS(=O)(=O)O.PP

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

ABL1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB2AGTR1BCL2BCL2A1BCL2L1BCL2L10BCL2L2BCRBRAFCHRM1CHRNA10CHRNA9DRD1DRD2DRD3DRD4DRD5EGFRF2FLT1FLT4GCKGHSRGNRHRGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHTR1AHTR1BHTR1DHTR2AHTR2CHTR3AIDH2KDRKITMAOBMCL1MTTPPP4HBPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PIKFYVEROCK1ROCK2SLC18A2SLC6A2SLC6A3SLC6A4TACR1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8gyrAgyrBparCparEpol

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11351756 0.90
SCHEMBL25599 0.89 CA2 (0.58)
SCHEMBL8596055 0.89 CA2 (0.58)
SCHEMBL105 0.89
SCHEMBL15109974 0.89
SCHEMBL128169 0.89
SCHEMBL246838 0.89 CA2 (0.58)
Phosphine SCHEMBL1052219 0.84
SCHEMBL20570028 0.84
SCHEMBL8541710 0.84 CA2 (0.54)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2278399-B1 Positive-working resist composition FUJIFILM CORP (JP) 2013-05-15 EP disclosed
US-RE43560-E1 Positive photosensitive compositions FUJIFILM CORPORATION (JP) 2012-07-31 US disclosed
EP-2477073-A1 Resist composition for electron beam, EUV or X-ray Fujifilm Corporation (JP) 2012-07-18 EP disclosed
EP-1367440-B1 Positive-working resist composition FUJIFILM CORP (JP) 2011-09-21 EP disclosed
EP-2278398-A2 Positive-working resist composition Fujifilm Corporation (JP) 2011-01-26 EP disclosed
EP-2278397-A2 Positive-working resist composition Fujifilm Corporation (JP) 2011-01-26 EP disclosed
EP-2278400-A2 Positive-working resist composition Fujifilm Corporation (JP) 2011-01-26 EP disclosed
EP-2278399-A2 Positive-working resist composition Fujifilm Corporation (JP) 2011-01-26 EP disclosed
EP-1467251-B1 Positive resist composition FUJIFILM CORP (JP) 2010-09-08 EP disclosed
EP-1117002-B1 Negative-working resist composition FUJIFILM CORP (JP) 2010-04-14 EP disclosed
US-20020061462-A1 Negative resist composition FUJI PHOTO FILM CO., LTD. 2002-05-23 US disclosed
US-20020058200-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2002-05-16 US disclosed
EP-1193555-A1 Negative resist composition Fuji Photo Film Co., Ltd. (JP) 2002-04-03 EP disclosed
US-20010041300-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
US-20010036590-A1 Chemical amplification type negative-working resist composition for electron beams or X-rays FUJIFILM CORPORATION (JP) 2001-11-01 US disclosed
US-6265135-B1 ARYL SULFONIUM OR IODONIUM COMPOUND WHICH GENERATES BENZENE-, NAPHTHALENE- OR ANTHRACENESULFONIC ACID WHICH IS SUBSTITUTED BY AT LEAST ONE FLUORINE ATOM AND/OR AT LEAST ONE GROUP CONTAINING A FLUORINE ATOM. FUJI PHOTO FILM CO., LTD. (JP) 2001-07-24 US disclosed
EP-1117004-A2 Electron beam or x-ray negative-working resist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-07-18 EP disclosed
EP-1117002-A1 Negative-working resist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-07-18 EP disclosed
EP-1109066-A1 Chemical amplification type negative-working resist composition for electron beams or x-rays FUJI PHOTO FILM CO., LTD. (JP) 2001-06-20 EP disclosed
EP-1076261-A1 Negative resist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-02-14 EP disclosed