Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.34 |
| ▸ | NPC1 | O15118 | 1/20 | 0.34 |
| ▸ | POLB | P06746 | 1/20 | 0.34 |
| ▸ | MAPT | P10636 | 1/20 | 0.34 |
| ▸ | PKM | P14618 | 1/20 | 0.34 |
| ▸ | HTT | P42858 | 1/20 | 0.34 |
| ▸ | RECQL | P46063 | 1/20 | 0.34 |
| ▸ | RAB9A | P51151 | 1/20 | 0.34 |
| ▸ | ATM | Q13315 | 1/20 | 0.34 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.34 |
| ▸ | GPX4 | P36969 | 1/20 | 0.32 |
| ▸ | OPRM1 | P35372 | 1/20 | 0.32 |
| ▸ | OPRD1 | P41143 | 1/20 | 0.32 |
| ▸ | OPRK1 | P41145 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16372800 | 1.00 | KDM4E (0.34) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL12416009 | 0.87 | — | — | |
| SCHEMBL11976384 | 0.87 | GPX4 (0.31) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL14602053 | 0.87 | CA12 (0.36) | OPRK1 | |
| SCHEMBL14330326 | 0.85 | — | — | |
| SCHEMBL16438427 | 0.85 | — | — | |
| SCHEMBL16372801 | 0.85 | — | — | |
| SCHEMBL13616647 | 0.84 | — | — | |
| SCHEMBL13042767 | 0.84 | TSHR (0.32) | — | |
| SCHEMBL15078348 | 0.84 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 406 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230296981-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230296980-A1 | RESIST MATERIAL AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| WO-2023153294-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-08-17 | — | — | WO | disclosed |
| US-20230174471-A1 | ACETAL-BASED COMPOUND, ACETAL-BASED PREPOLYMER, ACETAL-BASED POLYMER, AND PHOTORESIST COMPOSITION COMPRISING THE SAME | INHA INDUSTRY PARTNERSHIP INSTITUTE (KR) | 2023-06-08 | — | — | US | disclosed |
| US-10012903-B2 | Resist composition and pattern forming process | SHIN-ESTU CHEMICAL CO., LTD. (JP) | 2018-07-03 | — | — | US | disclosed |
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-10005868-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-20180134860-A1 | STRETCHABLE FILM, METHOD FOR FORMING THE SAME, STRETCHABLE WIRING FILM, AND METHOD FOR MANUFACTURING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-17 | — | — | US | disclosed |
| US-9958776-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-01 | — | — | US | disclosed |
| US-9958777-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-01 | — | — | US | disclosed |
| US-7368218-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-06 | — | — | US | disclosed |
| US-7332616-B2 | Polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-02-19 | — | — | US | disclosed |
| US-7332616-B2 | Polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-02-19 | — | — | US | disclosed |
| US-7255973-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-14 | — | — | US | disclosed |
| US-7255973-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-14 | — | — | US | disclosed |
| US-20070185226-A1 | NOVEL POLYMERIZABLE COMPOUND, POLYMER, POSITIVE-RESIST COMPOSITION, AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-09 | — | — | US | disclosed |
| US-7232638-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-19 | — | — | US | disclosed |
| US-7232638-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-19 | — | — | US | disclosed |
| US-7189493-B2 | Polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-7189493-B2 | Polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230174471-A1 | ACETAL-BASED COMPOUND, ACETAL-BASED PREPOLYMER, ACETAL-BASED POLYMER, AND PHOTORESIST COMPOSITION COMPRISING THE SAME | PARP10, ADCY10, APRT | KDM4E 2385/4885NPC1 4408/4885POLB 1422/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.