Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.41 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.41 |
| ▸ | MEN1 | O00255 | 1/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30539 | 0.96 | TSHR (0.44) | TSHRMAPK1MEN1KMT2AALDH1A1 | |
| SCHEMBL28587072 | 0.93 | TSHR (0.41) | TSHRMAPK1MEN1KMT2AALDH1A1 | |
| Bromide SCHEMBL5874693 | 0.93 | TSHR (0.41) | TSHRMAPK1MEN1KMT2AALDH1A1 | |
| SCHEMBL28878844 | 0.93 | TSHR (0.41) | TSHRMAPK1MEN1KMT2AALDH1A1 | |
| Methane SCHEMBL1001960 | 0.93 | TSHR (0.41) | TSHRMAPK1MEN1KMT2AALDH1A1 | |
| Iodide SCHEMBL5874477 | 0.93 | TSHR (0.41) | TSHRMAPK1MEN1KMT2AALDH1A1 | |
| Water SCHEMBL1246621 | 0.93 | TSHR (0.41) | TSHRMAPK1MEN1KMT2AALDH1A1 | |
| Ammonia Solution, Strong SCHEMBL5393633 | 0.93 | TSHR (0.41) | TSHRMAPK1MEN1KMT2AALDH1A1 | |
| SCHEMBL29183872 | 0.93 | TSHR (0.41) | TSHRMAPK1MEN1KMT2AALDH1A1 | |
| Hydrochloric Acid SCHEMBL634629 | 0.93 | TSHR (0.41) | TSHRMAPK1MEN1KMT2AALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 152 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11970647-B2 | Composition, its use and a process for selectively etching silicon-germanium material | BASF SE (DE) | 2024-04-30 | — | — | US | claimed |
| WO-2024083020-A1 | COMPOSITION FOR SELECTIVELY ETCHING ALUMINUM OXIDE | 安集微电子科技（上海）股份有限公司 | 2024-04-25 | — | — | WO | claimed |
| US-20240093089-A1 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT | BASF SE (DE) | 2024-03-21 | — | — | US | claimed |
| US-20230326759-A1 | Composition, Its Use And A Process For Selectively Etching Silicon-Germanium Material | BASF SE (DE) | 2023-10-12 | — | — | US | claimed |
| WO-2023161058-A1 | COMPOSITION, ITS USE AND A PROCESS FOR SELECTIVELY ETCHING SILICON-GERMANIUM MATERIAL | BASF SE (DE) | 2023-08-31 | — | — | WO | claimed |
| WO-2023161055-A1 | COMPOSITION, ITS USE AND A PROCESS FOR SELECTIVELY ETCHING SILICON-GERMANIUM MATERIAL | BASF SE (DE) | 2023-08-31 | — | — | WO | claimed |
| EP-4200895-A1 | COMPOSITION, ITS USE AND A PROCESS FOR SELECTIVELY ETCHING SILICON-GERMANIUM MATERIAL | BASF SE (DE) | 2023-06-28 | — | — | EP | claimed |
| EP-3997193-B1 | COMPOSITION, ITS USE AND A PROCESS FOR SELECTIVELY ETCHING SILICON-GERMANIUM MATERIAL | BASF SE (DE) | 2023-05-03 | — | — | EP | claimed |
| US-11377624-B2 | Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process | BASF SE (DE) | 2022-07-05 | — | — | US | claimed |
| EP-3997193-A1 | COMPOSITION, ITS USE AND A PROCESS FOR SELECTIVELY ETCHING SILICON-GERMANIUM MATERIAL | BASF SE (DE) | 2022-05-18 | — | — | EP | claimed |
| US-20030078173-A1 | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate | ENTEGRIS, INC. | 2003-04-24 | — | — | US | claimed |
| WO-2002077120-A1 | AQUEOUS CLEANING COMPOSITION CONTAINING COPPER-SPECIFIC CORROSION INHIBITOR FOR CLEANING INORGANIC RESIDUES ON SEMICONDUCTOR SUBSTRATE | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2002-10-03 | — | — | WO | claimed |
| US-20020043644-A1 | SELECTIVE SILICON OXIDE ETCHANT FORMULATION INCLUDING FLUORIDE SALT, CHELATING AGENT, AND GLYCOL SOLVENT | ATMI PACKAGING, INC. | 2002-04-18 | — | — | US | claimed |
| US-20010050350-A1 | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate | ADVANCED TECHNOLOGY MATERIALS INC. | 2001-12-13 | — | — | US | claimed |
| US-6280651-B1 | CAN ETCH DIFFERENT TYPES OF SILICON OXIDE AT DIFFERENT RELATIVE ETCH RATES | ADVANCED TECHNOLOGY MATERIALS, INC. | 2001-08-28 | — | — | US | claimed |
| EP-1062682-A4 | SELECTIVE SILICON OXIDE ETCHANT FORMULATION INCLUDING FLUORIDE SALT, CHELATING AGENT AND GLYCOL SOLVENT | ADVANCED TECH MATERIALS (US) | 2001-07-04 | — | — | EP | claimed |
| US-6224785-B1 | CLEANING COMPOUNDS FOR POST PLASMA ETCHING AND ASHING | ADVANCED TECHNOLOGY MATERIALS, INC. | 2001-05-01 | — | — | US | claimed |
| EP-1062682-A1 | SELECTIVE SILICON OXIDE ETCHANT FORMULATION INCLUDING FLUORIDE SALT, CHELATING AGENT AND GLYCOL SOLVENT | ADVANCED CHEMICAL SYSTEMS INTERNATIONAL CORPORATION (US) | 2000-12-27 | — | — | EP | claimed |
| WO-1999033094-A1 | SELECTIVE SILICON OXIDE ETCHANT FORMULATION INCLUDING FLUORIDE SALT, CHELATING AGENT AND GLYCOL SOLVENT | ADVANCED CHEMICAL SYSTEMS INTERNATIONAL INC. (US) | 1999-07-01 | — | — | WO | claimed |
| WO-1998030667-A1 | SEMICONDUCTOR WAFER CLEANING COMPOSITION AND METHOD WITH AQUEOUS AMMONIUM FLUORIDE AND AMINE | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 1998-07-16 | — | — | WO | claimed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240093089-A1 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT | STK11, CRKL, STK10 | TSHR 4142/4885MAPK1 921/4885MEN1 1128/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.