⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9243362 | 0.91 | — | — | |
| SCHEMBL47494 | 0.90 | HMGCR (0.32) | — | |
| SCHEMBL13607370 | 0.90 | — | — | |
| SCHEMBL9238614 | 0.89 | — | — | |
| SCHEMBL98341 | 0.88 | ADORA3 (0.33) | — | |
| SCHEMBL11911519 | 0.88 | ADORA3 (0.33) | — | |
| SCHEMBL47405 | 0.88 | ADORA3 (0.33) | — | |
| SCHEMBL47406 | 0.88 | ADORA3 (0.33) | — | |
| SCHEMBL12378936 | 0.88 | ADORA3 (0.33) | — | |
| SCHEMBL12202235 | 0.86 | HMGCR (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2482131-B1 | Resist composition and patterning process using the same | SHINETSU CHEMICAL CO (JP) | 2016-06-22 | — | — | EP | disclosed |
| US-8748076-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-10 | — | — | US | disclosed |
| US-8748076-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-10 | — | — | US | disclosed |
| US-8703384-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-22 | — | — | US | disclosed |
| US-8703384-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-22 | — | — | US | disclosed |
| US-20130101936-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-25 | — | — | US | disclosed |
| US-20130101936-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-25 | — | — | US | disclosed |
| US-20120196228-A1 | RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-02 | — | — | US | disclosed |
| US-20120164577-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120135350-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120135357-A1 | POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |