SCHEMBL98341

SCHEMBL98341

CCC1(OC(=O)C(C)(C)CC)CCCCCCC1

nearest known ligand 0.39

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ADORA3 P0DMS8 1/20 0.33
HMGCR P04035 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL47406 1.00 ADORA3 (0.33) ADORA3HMGCR
SCHEMBL47405 1.00 ADORA3 (0.33) ADORA3HMGCR
SCHEMBL12378936 1.00 ADORA3 (0.33) ADORA3HMGCR
SCHEMBL11911519 1.00 ADORA3 (0.33) ADORA3HMGCR
SCHEMBL47494 0.98 HMGCR (0.32) ADORA3HMGCR
SCHEMBL12202235 0.95 HMGCR (0.32) HMGCR
SCHEMBL13607370 0.91
SCHEMBL9244692 0.88
SCHEMBL16065295 0.86
SCHEMBL17789342 0.86 ADORA3 (0.32) ADORA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 364 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-11762288-B2 Resist composition, method of forming resist pattern, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-19 US disclosed
US-11754922-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-11754926-B2 Method of forming resist pattern, resist composition and method of producing the same TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-11747726-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-05 US disclosed
US-11703757-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-20100081086-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-01 US disclosed
US-20100047724-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-02-25 US disclosed
US-20090317743-A1 Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. 2009-12-24 US disclosed
US-20090297980-A1 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. 2009-12-03 US disclosed
US-20090197204-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2009-08-06 US disclosed
US-20090155715-A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-18 US disclosed
US-20090130590-A1 PHOTORESIST COMPOSITIONS AND PROCESS FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER PHOTORESIST SYSTEMS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-05-21 US disclosed
US-20080248425-A1 Adjust solubility of alkali developer using acid; acid generator; actinic radiation FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080248425-A1 Adjust solubility of alkali developer using acid; acid generator; actinic radiation FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
EP-1975705-A2 Positive resist composition and pattern-forming method FUJIFILM Corporation (JP) 2008-10-01 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 ADORA3 565/4885HMGCR 1395/4885
US-20090197204-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND RER1, FRG1, AFF1 ADORA3 1705/4885HMGCR 4325/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.