SCHEMBL926765

SCHEMBL926765

[CH2]C(=O)C1CCC(CC)CC1

nearest known ligand 0.38

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
THRA P10827 1/20 0.38
THRB P10828 1/20 0.38
PLG P00747 1/20 0.37
PLAT P00750 1/20 0.37
LMNA P02545 1/20 0.37
CYP19A1 P11511 1/20 0.33
OPRM1 P35372 1/20 0.33
EPHX2 P34913 1/20 0.33
KMT2A Q03164 3/20 0.32
MEN1 O00255 2/20 0.32
IDH1 O75874 1/20 0.32
MAPT P10636 1/20 0.32
PKM P14618 2/20 0.32
ALDH1A1 P00352 1/20 0.32
POLB P06746 1/20 0.32
HPGD P15428 1/20 0.32
HTT P42858 1/20 0.30
CNR1 P21554 1/20 0.30
CNR2 P34972 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11758964 0.80 LMNA (0.39) THRATHRBPLGPLATLMNA
SCHEMBL10388573 0.79 NOS2 (0.37) THRATHRBPLGPLATLMNA
SCHEMBL2317859 0.79
SCHEMBL1226464 0.78 LMNA (0.38) THRATHRBPLGPLATLMNA
SCHEMBL879831 0.78 LMNA (0.60) THRATHRBPLGPLATLMNA
Cyclopropane Carboxylic Acid SCHEMBL11636034 0.78 LMNA (0.60) THRATHRBPLGPLATLMNA
SCHEMBL178465 0.78 LMNA (0.60) THRATHRBPLGPLATLMNA
SCHEMBL14643284 0.78 LMNA (0.60) THRATHRBPLGPLATLMNA
SCHEMBL19533158 0.78 LMNA (0.38) THRATHRBPLGPLATLMNA
Bicarbonate SCHEMBL27380629 0.77 CYP19A1 (0.36) THRATHRBPLGPLATLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1788436-B1 Rework process for photoresist film SHINETSU CHEMICAL CO (JP) 2013-01-09 EP disclosed
US-7868407-B2 Substrate comprising a lower silicone resin film and an upper silicone resin film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-11 US disclosed
US-7642043-B2 Rework process for photoresist film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-7638268-B2 Rework process for photoresist film SHIN-ESTU CHEMICAL CO., LTD. (JP) 2009-12-29 US disclosed
EP-1788437-B1 Rework process for photoresist film SHINETSU CHEMICAL CO (JP) 2009-12-23 EP disclosed
EP-1801619-B1 Substrate comprising two antireflective silicone resin layers between an organic layer and a photoresist layer, method for producing the same and patterning process using the same SHINETSU CHEMICAL CO (JP) 2008-08-06 EP disclosed
US-7303785-B2 Antireflective film material, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-04 US disclosed
EP-1801619-A2 Substrate, method for producing the same, and patterning process using the same Shin-Etsu Chemical Co., Ltd. (JP) 2007-06-27 EP disclosed
US-20070128886-A1 Substrate, method for producing the same, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-07 US disclosed
US-20070117411-A1 Rework process for photoresist film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-24 US disclosed
EP-1788436-A1 Rework process for photoresist film Shin-Etsu Chemical Company, Ltd. (JP) 2007-05-23 EP disclosed
EP-1788437-A2 Rework process for photoresist film Shinetsu Chemical Co., Ltd. (JP) 2007-05-23 EP disclosed
US-20070111134-A1 solvent remove the first photoresist film, forming a second photoresist film over the second antireflection silicone resin film which is over the first antireflection silicone resin film; lower cost and provide an excellent resist pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-20040253461-A1 Antireflective film material, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-16 US disclosed