Known targets — ChEMBL curated mechanism
CHRM1CHRM2CHRM3CHRM4CHRM5SLC6A2dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP3A4 | P08684 | 4/20 | 0.47 |
| ▸ | LMNA | P02545 | 2/20 | 0.47 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.47 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.47 |
| ▸ | THPO | P40225 | 1/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.43 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.43 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.43 |
| ▸ | CA12 | O43570 | 3/20 | 0.42 |
| ▸ | CA9 | Q16790 | 3/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.42 |
| ▸ | BCHE | P06276 | 1/20 | 0.42 |
| ▸ | ACHE | P22303 | 1/20 | 0.42 |
| ▸ | ATM | Q13315 | 1/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.42 |
| ▸ | CA1 | P00915 | 1/20 | 0.42 |
| ▸ | CA2 | P00918 | 1/20 | 0.42 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.42 |
| ▸ | RECQL | P46063 | 1/20 | 0.41 |
| ▸ | HTT | P42858 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7133269 | 0.82 | CA12 (0.47) | CYP3A4LMNACYP2D6MAPK1THPO | |
| SCHEMBL64189 | 0.82 | CA12 (0.47) | CYP3A4LMNACYP2D6MAPK1THPO | |
| SCHEMBL3839710 | 0.80 | CA12 (0.46) | CYP3A4LMNACYP2D6MAPK1THPO | |
| SCHEMBL3144525 | 0.80 | CA12 (0.46) | CYP3A4LMNACYP2D6MAPK1THPO | |
| SCHEMBL64621 | 0.80 | CA12 (0.46) | CYP3A4LMNACYP2D6MAPK1THPO | |
| P-Xylene SCHEMBL3404430 | 0.80 | GAA (0.46) | CYP3A4LMNACYP2D6MAPK1THPO | |
| SCHEMBL2964104 | 0.80 | CA12 (0.46) | CYP3A4LMNACYP2D6MAPK1THPO | |
| SCHEMBL11347502 | 0.80 | CYP3A4 (0.45) | CYP3A4LMNACYP2D6MAPK1THPO | |
| SCHEMBL926758 | 0.80 | GAA (0.48) | CYP3A4LMNACYP2D6MAPK1THPO | |
| SCHEMBL10418852 | 0.79 | GAA (0.52) | CYP3A4LMNACYP2D6MAPK1THPO |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1788436-B1 | Rework process for photoresist film | SHINETSU CHEMICAL CO (JP) | 2013-01-09 | — | — | EP | disclosed |
| US-7868407-B2 | Substrate comprising a lower silicone resin film and an upper silicone resin film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-11 | — | — | US | disclosed |
| US-7642043-B2 | Rework process for photoresist film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-05 | — | — | US | disclosed |
| US-7638268-B2 | Rework process for photoresist film | SHIN-ESTU CHEMICAL CO., LTD. (JP) | 2009-12-29 | — | — | US | disclosed |
| EP-1788437-B1 | Rework process for photoresist film | SHINETSU CHEMICAL CO (JP) | 2009-12-23 | — | — | EP | disclosed |
| EP-1801619-B1 | Substrate comprising two antireflective silicone resin layers between an organic layer and a photoresist layer, method for producing the same and patterning process using the same | SHINETSU CHEMICAL CO (JP) | 2008-08-06 | — | — | EP | disclosed |
| US-7303785-B2 | Antireflective film material, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-04 | — | — | US | disclosed |
| EP-1801619-A2 | Substrate, method for producing the same, and patterning process using the same | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-06-27 | — | — | EP | disclosed |
| US-20070128886-A1 | Substrate, method for producing the same, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-07 | — | — | US | disclosed |
| US-20070117411-A1 | Rework process for photoresist film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-24 | — | — | US | disclosed |
| EP-1788436-A1 | Rework process for photoresist film | Shin-Etsu Chemical Company, Ltd. (JP) | 2007-05-23 | — | — | EP | disclosed |
| EP-1788437-A2 | Rework process for photoresist film | Shinetsu Chemical Co., Ltd. (JP) | 2007-05-23 | — | — | EP | disclosed |
| US-20070111134-A1 | solvent remove the first photoresist film, forming a second photoresist film over the second antireflection silicone resin film which is over the first antireflection silicone resin film; lower cost and provide an excellent resist pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20040253461-A1 | Antireflective film material, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-16 | — | — | US | disclosed |