SCHEMBL929341

SCHEMBL929341

CC(C)(C)O[SiH2]CCCCCC[SiH2]OC(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1123039 1.00
SCHEMBL706692 0.97
SCHEMBL703384 0.91
SCHEMBL3757875 0.90 TSHR (0.38)
SCHEMBL6009905 0.90 TSHR (0.38)
SCHEMBL8678585 0.87 TSHR (0.33)
SCHEMBL4955707 0.85 NFKB1 (0.33)
SCHEMBL705840 0.84
SCHEMBL768260 0.83 NFKB1 (0.30)
SCHEMBL705323 0.83 LMNA (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8603588-B2 Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film MITSUI CHEMICALS, INC. (JP) 2013-12-10 US disclosed
US-8304924-B2 Composition for sealing semiconductor, semiconductor device, and process for producing semiconductor device MITSUI CHEMICALS, INC. (JP) 2012-11-06 US disclosed
US-20110241210-A1 COMPOSITION FOR SEALING SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE MITSUI CHEMICALS, INC. (JP) 2011-10-06 US disclosed
EP-2357664-A1 COMPOSITION FOR SEALING SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE Mitsui Chemicals, Inc. (JP) 2011-08-17 EP disclosed
US-20110018108-A1 COMPOSITION AND METHOD FOR PRODUCTON THEREOF, POROUS MATERIAL AND METHOD FOR PRODUCTION THEREOF, INTERLAYER INSULATING FILM, SEMICONDUCTOR MATERIAL, SEMICONDUCTOR DEVICE, AND LOW-REFRACTIVE-INDEX SURFACE PROTECTION FILM MITSUI CHEMICALS ,INC. (JP) 2011-01-27 US disclosed
EP-2267080-A1 COMPOSITION AND METHOD FOR PRODUCTION THEREOF, POROUS MATERIAL AND METHOD FOR PRODUCTION THEREOF, INTERLAYER INSULATING FILM, SEMICONDUCTOR MATERIAL, SEMICONDUCTOR DEVICE, AND LOW-REFRACTIVE-INDEX SURFACE PROTECTION FILM Mitsui Chemicals, Inc. (JP) 2010-12-29 EP disclosed
US-20100233482-A1 Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device HAMADA YOSHITAKA 2010-09-16 US disclosed
US-7754330-B2 Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-13 US disclosed
US-20090294922-A1 ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE PANASONIC CORPORATION (JP) 2009-12-03 US disclosed
US-20090294726-A1 ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-03 US disclosed