SCHEMBL9468792

SCHEMBL9468792

COc1ccc(S(=O)(=O)O)c2ccccc12.O=[N+]([O-])c1ccc(S(=O)(=O)O)c2ccccc12

nearest known ligand 0.48

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.46
TDP1 Q9NUW8 2/20 0.46
CTSB P07858 1/20 0.45
FABP4 P15090 5/20 0.44
MITF O75030 1/20 0.43
GAA P10253 1/20 0.43
MAPT P10636 1/20 0.43
PKM P14618 1/20 0.43
HTT P42858 1/20 0.43
NPC1 O15118 1/20 0.43
L3MBTL1 Q9Y468 1/20 0.42
HPGD P15428 2/20 0.41
MEN1 O00255 1/20 0.41
POLB P06746 1/20 0.41
KMT2A Q03164 1/20 0.41
MPL P40238 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9680529 0.87 CTSB (0.58) ALDH1A1TDP1CTSBMAPTHTT
SCHEMBL9468793 0.86 ALDH1A1 (0.46) ALDH1A1TDP1CTSBFABP4MITF
SCHEMBL589908 0.85 ALDH1A1 (0.61) ALDH1A1TDP1CTSBGAAMAPT
SCHEMBL2567982 0.85 ALDH1A1 (0.55) ALDH1A1FABP4HTTNPC1L3MBTL1
SCHEMBL3781603 0.84 ALDH1A1 (0.54) ALDH1A1FABP4HTTNPC1L3MBTL1
SCHEMBL1415943 0.84 ALDH1A1 (0.54) ALDH1A1FABP4HTTNPC1L3MBTL1
SCHEMBL13719098 0.84 ALDH1A1 (0.54) ALDH1A1FABP4HTTNPC1L3MBTL1
SCHEMBL2547051 0.78 TDP1 (0.64) ALDH1A1TDP1CTSBGAAHPGD
SCHEMBL8321796 0.77 CTSB (0.53) ALDH1A1TDP1CTSBMITFGAA
SCHEMBL8321794 0.77 CTSB (0.53) ALDH1A1TDP1CTSBMITFGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5200529-A Blocked monomer and polymers therefrom for use as photoresists HOECHST CELANESE CORPORATION (US) 1993-04-06 US disclosed
EP-0291994-A2 Photoresist composition and photoresist material prepared therefrom, containing blocked monomer imide groups, and a suitable maleic-acid monomer HOECHST AKTIENGESELLSCHAFT (DE) 1988-11-23 EP disclosed